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The study of shape of electrodes and I-V characteristics for Ultraviolet LED

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About functional parameters of a LED / UVLED (Light Emitting Diode/Ultra Violet LED), one of the most important parameters is the I-V characteristic. By researching factors affect to the I-V characteristic of uvled, we found that beside of the structure of the device itself, there is the influence of the electrode materials, electrode shapes, the process of wiring and packaging. In this work, we want to improve the performance of UVLED to find out the optimal mask design principles. The study is based on theoretical mathematical models, as well as the use of simulation software tool Comsol. From all results obtained, the team has improved mask design to manufacture electrodes for GaN-based UVLED. Electrode masks are designed by three softwares, which are Intellisuite, Klayout and AutoCad. Intellisuite masks would be used in fabrication simulation while Klayout and AutoCad are used to fabricate electrodes in experiments. As well as, we silmulated the structure of an uvled 355nm emission wavelength by TCAD software, in order to compare with uvled sample that has the same emission wavelength.

Abstract

About functional parameters of a LED / UVLED (Light Emitting Diode/Ultra Violet LED), one of the most important parameters is the I-V characteristic. By researching factors affect to the I-V characteristic of uvled, we found that beside of the structure of the device itself, there is the influence of the electrode materials, electrode shapes, the process of wiring and packaging. In this work, we want to improve the performance of UVLED to find out the optimal mask design principles. The study is based on theoretical mathematical models, as well as the use of simulation software tool Comsol. From all results obtained, the team has improved mask design to manufacture electrodes for GaN-based UVLED. Electrode masks are designed by three softwares, which are Intellisuite, Klayout and AutoCad. Intellisuite masks would be used in fabrication simulation while Klayout and AutoCad are used to fabricate electrodes in experiments. As well as, we silmulated the structure of an uvled 355nm emission wavelength by TCAD software, in order to compare with uvled sample that has the same emission wavelength.

참고문헌 (8)

  1. Joo Sun Yun, "Current Spreading Analysis in Vertical Electrode GaN-based Blue LEDs", Proc. of SPIE, 6841, pp.3~, Department of Electrical and Computer Engineering, Hanyang University
  2. Design, manufacture electrode layer for Schottky diode with high breakdown voltage and leakage current very little for flow control applications in the power storage device, electric cars, "Nguyen Viet Hung", HCMC, 64~66, pp.Research project in SHTP
  3. H. S. Kim, "Modeling of a GaN-based lightemitting diode for uniform current spreading", Appl. Phys. Lett, 77(12), pp.1903~1904 (2000)
  4. H. S. Kim, "Lateral current transport path, a model for GaN-based light-emitting. diodes : Applications to practical device designs", Appl. Phys. Lett, 81(7), pp.1326~1828 (2002)
  5. Nguyen Van Hieu, "The Study of Doping Concentration in ALyGA1-y Block Layer Based on Multi Quantum Well of 313m LED", Journal of Emerging Trends in Engineering and applied sciences, 2(6), pp.1054~1058 (2011)
  6. Tran Le Thien Thuy, "The Capacitive Pressure Sensor for High Temperature Application: Design and Fabrication", Journal of Emerging Trends in Engineering and applied sciences, 2(6), pp.576~580 (2011)
  7. Bui Van Quang, "The study of number and thickness of Multi quantum well based on AlGaN UVLED", the 3rd International Workshop on Nanotechnologies and Applications, pp.792~ (2011)
  8. Huynh Hoang Trung, "Wavelength dependent of doping concentration in AlyGa1-yN block layer for MQW UVLED", the 3rd International Workshop on Nanotechnologies and Applications, pp.519~ (2011)

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