Impact of Electrode Geometry on the Efficiency of InGaN/GaN Micro-LEDs
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InGaN/GaN micro–light-emitting diodes (μLEDs) with varying anode to emitting area ratios were fabricated toinvestigate the impact of electrode geometry on blue emission efficiency. Uniform optical emission and consistentelectroluminescence spectra confirm high structural quality of the epitaxial wafer and robustness of the fabricationprocess. Comparative electrical measurements reveal that optimized electrode geometry enhances both wall-plugefficiency and external quantum efficiency through improved current spreading and reduced light reflection loss. Meanwhile, devices with the largest emitting area exhibit the highest luminous efficacy. These results demonstratethat electrode geometry can enhance μLEDefficiency, offering practical design guidelines for high performance μLEDdisplay and photonic applications.
Abstract
InGaN/GaN micro–light-emitting diodes (μLEDs) with varying anode to emitting area ratios were fabricated toinvestigate the impact of electrode geometry on blue emission efficiency. Uniform optical emission and consistentelectroluminescence spectra confirm high structural quality of the epitaxial wafer and robustness of the fabricationprocess. Comparative electrical measurements reveal that optimized electrode geometry enhances both wall-plugefficiency and external quantum efficiency through improved current spreading and reduced light reflection loss. Meanwhile, devices with the largest emitting area exhibit the highest luminous efficacy. These results demonstratethat electrode geometry can enhance μLEDefficiency, offering practical design guidelines for high performance μLEDdisplay and photonic applications.