HVPE(Hydride Vapor Phase Epitaxy) 법을 적용한 AlN 단결정 막층의 N/Al 비의 변화에 따른 성장 거동에 관한 연구
A study on the change of N/Al ratio in the growth of thick AlN single crystal layer using HVPE (Hydride Vapor Phase Epitaxy) method
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초록
AlN 단결정을 성장하기 위하여 HVPE(hydride vapor phase epitaxy) 공법을 이용하였다. 성장중 공급되는 캐리어 가스인 질소양을 고정하여, 질소(N)와 알루미늄(Al)의 공급 비율의 변화에 따라 성장된 결정상의 변화가 있었다. 성장된 AlN 후막 결정상을 광학현미경과 SEM으로 관찰하였고, 그 결과를 고찰하여 보고하고자 한다.
Abstract
In order to grow AlN single crystals, HVPE (hydride vapor phase epitaxy) method was used and the sapphire substrates were adapted to the seed for the growth of single crystal AlN. The nitrogen gas, the carrier gas, was used to supply the HCl gas and NH3 and to keep the flow in the reactor. This redearch was carried out in order to evaluate the growth behavior of AlN crystal growth due to the change of the V/III gas ratio. By fixing the amount of nitrogen carrier gas, which is supplied during growth, there was a change in the grown crystal phase depending on the change in the supply ratio of nitrogen (N) and aluminum (Al). The grown AlN thick films had the variation result along the change of the V/III gas ratio. The growth behavior of AlN crystal was characterized by observation using an optical microscope and SEM, and the results are discussed and reported.