실리콘 기판위에 금속 완충층을 이용한 GaN 성장과 특성분석
Effect of metal buffer layers on the growth of GaN on Si substrates
0
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
실리콘 기판 위에 GaN를 성장하기 위해서 AlN 완충층을 사용해 왔다. 그러나 AlN은 아직까지 high doping이쉽지 않기 때문에, 이로 인해 AlN를 전자소자나 광소자 제작을 위한 완충층으로 이용하는 경우 직렬 저항의 증가라는 문제가 발생할 수 있다. 본 연구에서는 이러한 문제점을 개선하기 위해 AlN 완충층 대신에 금속 완충층을 사용하여 실리콘기판 위에 GaN 박막 성장실험을 수행하였다. Al, Ti, Cr 그리고 Au 등을 금속 완충층으로 사용하여 실리콘 기판 위에 GaN 층을 성장하였다. 성장된 GaN 박막의 표면 특성을 분석하기 위해 광학현미경과 SEM을 사용하였고, 결정성과 광학적 특성을 평가하기 위하여 PL과 XRD 분석을 실시하였으며 AlN 완충층을 사용한 경우와 금속 완충층을 사용한 경우의 저항 차이를 확인하기 위하여 전류-전압 특성을 측정하였다.
Abstract
AlN buffer layers have been used for the growth of GaN layers on Si substrates. However, the doping of high concentration of carriers into AlN layers is still not easy, therefore it may cause the increase of series resistance when it is used for the electrical or optical devices. In this work, to improve such a problem, the growth of GaN layers on Si substrates were performed using metal buffer layers instead of AlN buffer layer. We tried combinations of Ti, Al, Cr and Au as metal buffer layers for the growth of GaN on Si substrates. Surface morphology was measured by optical microscope and scanning electron microscope (SEM), and optical properties and crystalline quality were measured by photoluminescence (PL) and X-ray diffractometer (XRD), respectively. Electrical resistances for both cases of AlN and metal buffer layer were compared by current-voltage (I-V) measurement.
참고문헌 (12)
- X. Weng, "Evolution of threading dislocations in MOCVD-grown GaN films on (111) Si substrates", J. Crystal Growth, 300, pp.822~ (2007)
- Doek Kyu Kim, "Growth of Crack-Free GaN Films on Si(111) Substrates with AlN Buffer Layers", Journal of the Korean Physical Society, 49(4), pp.1497~1500 (2006), 한국물리학회
- A. Dadgar, "MOVPE growth of GaN on Si - substrates and strain", Thin Solid Films, 515, pp.4356~ (2007)
- Z. Liu, "Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD", J. Crystal Growth, 298, pp.281~ (2007)
- V.N. Bessolov, "GaN films grown by vapor-phase epitaxy in a hydride chloride system on Si(111) substrates with AlN buffer sublayers", Techn. Phys, 31(11), pp.915~ (2005)
- J.X. Zhang, "Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition", Thin Solid Films, 515, pp.4397~ (2007)
- Y. Dikme, "Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)", J. Crystal Growth, 248, pp.578~ (2003)
- C.K. Shu, "Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition", Appl. Phys. Lett, 73, pp.641~ (1998)
- K.Y. Zang, "Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films", Phys. Status Solidi, C7, pp.2067~ (2003)
- A. Watanabe, "The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer", J. Crystal Growth, 128, pp.391~ (1993)
- J.H. Choi, "Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates", Nature Photonics, 5, pp.763~ (2011)
- H. Xu, "Gallium vacancies related yellow luminescence in N-face GaN epitaxial film", Applied Surface Science, 258, pp.6451~ (2012)