Synthesis of β-SiC Powder using a Recycled Graphite Block as a Source
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This paper relates to the synthesis of a source powder for SiC crystal growth. β-SiC powders are synthesized at high temperatures (>1400 o C) by a reaction between silicon powder and carbon powder. The reaction is carried out in a graphite crucible operating in a vacuum ambient (or Ar gas) over a period of time sufficient to cause the Si+C mixture to react and form polycrystalline SiC powder. End-product characterizations are pursued with X-ray diffraction analysis, SEM/EDS, particle size analyzer and ICP-OES. The purity of the end-product was analyzed with the Korean Standard KS L 1612.
Abstract
This paper relates to the synthesis of a source powder for SiC crystal growth. β-SiC powders are synthesized at high temperatures (>1400 o C) by a reaction between silicon powder and carbon powder. The reaction is carried out in a graphite crucible operating in a vacuum ambient (or Ar gas) over a period of time sufficient to cause the Si+C mixture to react and form polycrystalline SiC powder. End-product characterizations are pursued with X-ray diffraction analysis, SEM/EDS, particle size analyzer and ICP-OES. The purity of the end-product was analyzed with the Korean Standard KS L 1612.
참고문헌 (9)
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