재생 분말을 활용한 4H-SiC 벌크 단결정 성장
4H-SiC bulk single crystal growth using recycled powder
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초록
본 연구는 재생된 SiC 분말을 이용하여 단결정 성장 가능성을 검증하는 것을 목적으로 한다. 재활용 분말의 입도, 형상, 조성, 불순물 등의 기초적인 물성을 분석하고, 이를 활용하여 반응기 내부에서 일어날 수 있는 승화 거동을 예측하였다. 종합적인 판단 결과, 재생 분말의 물성은 단결정 성장에 적합 하였고, 이를 이용하여 단결정 성장 실험을 진행하였다. 높이 25 mm, 직경 100 mm 4H-SiC 단결정 잉곳을 다른 다형혼입 없이 성장 시켰다. 동공 결함 밀도는 0.02 ea/cm², 비저항은 0.015~0.020 ohm·cm² 측정되어 상용 수준의 품질을 얻었으나, 실제 소자 적용을 위해서는 전위 결함, 적층 결함과 관련된 추가 분석이 필요하다고 판단된다.
Abstract
This study is to verify the feasibility of SiC single crystal growth using recycled SiC powder. The fundamental physical properties such as particle size, shape, composition and impurities of the recycled powder were analyzed, and the sublimation behavior occurring inside the reactor were predicted using the basic data. As a result of comprehensive judgment,the physical properties of the recycled powder were suitable for single crystal growth, and single crystal growth experiments were conducted using this. 100 mm 4H-SiC single crystal ingot with a height of 25 mm was grown without poly type inclusion. In the case of micro-pipe density was 0.02 ea/cm² and resistivity characteristics was 0.015~0.020 ohm·cm², commercial level quality was obtained, but additional analysis related to dislocation density and stacking faults is required for device application.
참고문헌 (9)
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