실리콘 웨이퍼의 비유전율과 손실 탄젠트의 측정
Measurements of Relative Permittivity and Loss Tangent of Silicon Wafer
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초록
실리콘 웨이퍼 상에 만들어지는 회로의 동작주파수가 마이크로웨이브 대역에서 밀리미터웨이브 대역까지 확대되고 있다. 실리콘 웨이퍼를 이용하여 회로를 구성하였을 때 동작 주파수와 높은 주파수의 고조파 성분을 고려하여야 한다. 따라서 실리콘 웨이퍼의 비유전율과 손실 탄젠트를 정확히 알고 있어야 회로 설계를 정확히 할 수 있다. 본 논문에서는 원통형 공동 공진기를 이용하여 실리콘 웨이퍼의 비유전율과 손실 탄젠트를 측정하였다. 실리콘 웨이퍼의 경우 쉽게 깨지는 특성이 있어, 기존의 비유전율과 손실 탄젠트 측정 방법으로는 측정이 불가능하다. 그러나 본 논문의 방법으로 측정하면 실리콘 웨이퍼를 깨트려서 원통형 공동 공진기에 삽입 후 측정이 가능하기 때문에 측정의 용이성이 있다. 원통형 공동 공진기 내부에 실리콘 웨이퍼 시편을 삽입한 경우와 비어있는 경우의 공진주파수 스캔 결과에서 가장 변화가 큰 모드를 선택하였다. 이 때의 시뮬레이터에서 실리콘 웨이퍼의 비유전율과 손실 탄젠트를 측정하였다. 측정 결과 비소(AS)가 도핑된 실리콘 웨이퍼의 경우는 비유전율이 16.5로 높은 편이며 손실 탄젠트 또한 0.5로 높았고, 비저항이 19인 실리콘 웨이퍼의 경우 비유전율이 12, 손실 탄젠트가 0.1로 측정되었다.
Abstract
The operating frequency of designed circuits on silicon wafers is expanding from the microwave band to the millimeter wave band. When a circuit is constructed using a silicon wafer, the operating frequency and high-frequency harmonics must be considered. Therefore, it is possible to accurately design a circuit that it is necessary to know exactly the relative permittivity and loss tangent of silicon wafers. In this paper, the relative permittivity and loss tangent of a silicon waver were measured using a cylindrical cavity resonator. In the case of a silicon wafer, it is easily broken, so it is impossible to measure it using the conventional the relative permittivity and loss tangent measurement methods. However, when measured by the method of this paper, it is possible to measure after breaking a silicon wafer and inserting it into a cylindrical cavity resonator, so it is easy to measure. The relative permittivity and loss tangent of the silicon wafer on the simulator were measured by selecting the mode with the largest change in the resonance frequency. This is results in the case of inserting the silicon wafer into the cylindrical cavity resonator and in the case of empty. As a results of the measurement, in the case of the silicon wafer doped with AS, the relative permittivity was high at 16.5 and the loss tangent was high as 0.5. In the case of a silicon wafer with a resistivity of 19, the relative permittivity was 12 and the loss tangent was 0.1.
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