The consequences of proton irradiation of KLuP2O7 doped with Pr3+ ions
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In this report spectroscopic properties of KLuP2O7 phosphate doped with Pr3+ ions are presented. Among the presented results, there are spectra of photoluminescence (PL) at room temperature and T = 5 K, excited with selective UV photons, spectra of PL excitation, and electron spin resonance (ESR) measurements. Measurements of luminescence spectra were performed with non-irradiated samples and after irradiation with protons (E = 18 MeV). Measurements of ESR spectra were carried out after irradiation with fast electrons (E = 10 MeV). In the studied samples doped with Pr3+ ions, three typical channels of radiative relaxation of electron excitations were observed: interconfigurational d→f transitions, intraconfigurational f→f transitions and defect-related luminescence. After irradiation significant changes in emission characteristics were observed, including a redistribution of the intensity of interconfigurational transitions, an increase in defect-related luminescence and the manifestation of new emission centers. The generation of radiation-induced defects presumably occurs through the formation of complexes composed of phosphorus and oxygen atoms.
Abstract
In this report spectroscopic properties of KLuP2O7 phosphate doped with Pr3+ ions are presented. Among the presented results, there are spectra of photoluminescence (PL) at room temperature and T = 5 K, excited with selective UV photons, spectra of PL excitation, and electron spin resonance (ESR) measurements. Measurements of luminescence spectra were performed with non-irradiated samples and after irradiation with protons (E = 18 MeV). Measurements of ESR spectra were carried out after irradiation with fast electrons (E = 10 MeV). In the studied samples doped with Pr3+ ions, three typical channels of radiative relaxation of electron excitations were observed: interconfigurational d→f transitions, intraconfigurational f→f transitions and defect-related luminescence. After irradiation significant changes in emission characteristics were observed, including a redistribution of the intensity of interconfigurational transitions, an increase in defect-related luminescence and the manifestation of new emission centers. The generation of radiation-induced defects presumably occurs through the formation of complexes composed of phosphorus and oxygen atoms.