A New Trend of In-situ Electron Microscopy with Ion and Electron Beam Nano-Fabrication

Abstract

Nanofabrication with finely focused ion and electron beams is reviewed, and position and size controlledfabrication of nano-metals and -semiconductors is demonstrated. A focused ion beam (FIB) interface attachedto a column of 200keV transmission electron microscope(TEM) was developed. Parallel lines and dots arrayswere patterned on GaAs, Si and SiO2 substrates with a 25 keV Ga+ -temperature. FIB nanofabrication to semiconductor specimens caused amorphization and Ga injection. For theelectron beam induced chemical vapor deposition (EBI-CVD), we have discovered that nano-metal dots areformed depending upon the beam diameter and the exposure time when decomposable gases such as W(CO)6were introduced at the beam irradiated areas. The diameter of the dots was reduced to less than 2.0nm with theUHV-FE- -SEM. Self-standing 3Dnanostructures were also successfully fabricated.