Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material
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The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.
Abstract
The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.
참고문헌 (3)
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- T. Nagase, "Electron irradiation induced crystallization of the amorphous phase in Zr65.0Al7.5Ni10.0Cu17.5 metallic glass", Sci. Technol. Adv. Mater, 5, pp.57~67 (2004)
- D. Zhou, "Electron-beamirradiation-induced crystallization of amorphous solid phase change materials", Jpn. J. Appl. Phys, 57, pp.041401~ (2018)