Sequential conversion from line defects to atomic clusters in monolayer WS2
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Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS2 and WS2, S vacancies are formed preferentially, and they are aligned linearly to constitute line defects. And then, a hole is formed at the point where the successively formed line defects collide, and metal clusters are also formed at the edge of the hole. This study reports a process in which the line defects formed in a monolayer WS2 sheet expends into holes. Here, the process in which the W cluster, which always occurs at the edge of the formed hole, goes through a uniform intermediate phase is explained based on the line defects and the formation behavior of the hole. Further investigation confirms the atomic structure of the intermediate phase using annular dark field scanning transition electron microscopy (ADF-STEM) and image simulation.
Abstract
Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS2 and WS2, S vacancies are formed preferentially, and they are aligned linearly to constitute line defects. And then, a hole is formed at the point where the successively formed line defects collide, and metal clusters are also formed at the edge of the hole. This study reports a process in which the line defects formed in a monolayer WS2 sheet expends into holes. Here, the process in which the W cluster, which always occurs at the edge of the formed hole, goes through a uniform intermediate phase is explained based on the line defects and the formation behavior of the hole. Further investigation confirms the atomic structure of the intermediate phase using annular dark field scanning transition electron microscopy (ADF-STEM) and image simulation.
참고문헌 (32)
- N. Alem, "Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy", Phys. Rev. B, 80, pp.155425~ (2009)[DOI]
- N. Alem, "Vacancy growth and migration dynamics in atomically thin hexagonal boron nitride under electron beam irradiation", Phys. Status Solidi(RRL), 5, pp.295~297 (2011)[DOI]
- A. Azizi, "Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide", Nat. Commun, 5, pp.4867~ (2014)[DOI]
- S. Barja, "Charge density wave order in 1D mirror twin boundaries of single layer MoSe2", Nat. Phys, 12, pp.751~756 (2016)[DOI]
- M. Bieri, "Porous graphenes : Twodimensional polymer synthesis with atomic precision", Chem. Commun, 45, pp.6919~6921 (2009)[DOI]
- A. R. Botello-Mendez, "Onedimensional extended lines of divacancy defects in graphene", Nanoscale, 3, pp.2868~2872 (2011)[DOI]
- Qu Chen, "Ultralong 1D Vacancy Channels for Rapid Atomic Migration during 2D Void Formation in Monolayer MoS 2", ACS Nano, 12(8), pp.7721~7730 (2018), American Chemical Society (ACS)[DOI]
- A. N. Enyashin, "Line defects in molybdenum disulfide layers", J. Phys. Chem. C, 117, pp.10842~10848 (2013)[DOI]
- R. Faccio, "The electronic structure and optical response of rutile, anatase and brookite TiO2", J. Phys. Condens. Matter, 24, pp.375304~ (2012)[DOI]
- A. B. Farimani, "DNA base detection using a single-layer MoS2", ACS Nano, 8, pp.7914~7922 (2014)[DOI]
- C. O. Girit, "Graphene at the edge:Stability and dynamics", Science, 323, pp.1705~1708 (2009)[DOI]
- Y. Han, "Electronic and magnetic properties of MoS2nanoribbons with sulfur line vacancy defects", Appl. Surf. Sci, 346, pp.470~476 (2015)[DOI]
- H. -P. Komsa, "Two-dimensional transition metal dichalcogenides under electron irradiation : defect production and doping", Phys. Rev. Lett, 109, pp.035503~ (2002)[DOI]
- H. P. Komsa, "From point to extended defects in two-dimensional MoS2 : Evolution of atomic structure under electron irradiation", Phys. Rev. B : Condens. Matter Mater. Phys, 88, pp.035301~ (2013)[DOI]
- J. Kotakoski, "Electron knockon damage in hexagonal boron nitride monolayers", Phys. Rev. B, 82, pp.113404~ (2010)[DOI]
- J. Lahiri, "An extended defect in graphene as a metallic wire", Nat. Nanotechnol, 5, pp.326~329 (2010)[DOI]
- D. Le, "Single-layer MoS2 with sulfur vacancies: Structure and catalytic application", J. Phys. Chem. C, 118, pp.5346~5351 (2014)[DOI]
- Y. -C. Lin, "Three-fold rotational defects in two-dimensional transition metal dichalcogenides", Nat. Commun, 6, pp.6736~ (2015)[DOI]
- X. Liu, "Top-down fabrication of sub-nanometre semiconducting nanoribbons derived from molybdenum disulfide sheets", Nat. Commun, 4, pp.1776~ (2013)[DOI]
- Y. Liu, "Pushing the performance limit of sub-100nm molybdenum disulfide transistors", Nano Lett, 16, pp.6337~6432 (2016)[DOI]
- Y. Liu, "Dislocations and grain boundaries in twodimensional boron nitride", ACS Nano, 6, pp.7053~7058 (2012)[DOI]
- A. Nourbakhsh, "MoS2 field effect transistors with sub-10nm channel length", Nano Lett, 16, pp.7798~7806 (2016)[DOI]
- Hyo Ju Park, "Hole Defects on Two-Dimensional Materials Formed by Electron Beam Irradiation: Toward Nanopore Devices", Applied Microscopy, 45(3), pp.107~114 (2015), 한국현미경학회
- B. Radisavljevic, "Single-layer MoS2transistors", Nat. Nanotechnol, 6, pp.147~150 (2011)[DOI]
- G. H. Ryu, "Line defect mediated formation of hole and Mo clusters in monolayer molybdenum disulfide", 2D Mater, 3, pp.014002~ (2016)[DOI]
- G. H. Ryu, "Atomic-scale dynamics of triangular hole growth in monolayer hexagonal boron nitride under electron irradiation", Nanoscale, 7, pp.10600~10605 (2015)[DOI]
- X. Sang, "In situ edge engineering in two-dimensional transition metal dichalcogenides", Nat. Commun, 9, pp.2051~ (2018)[DOI]
- R.E. Smallman, "Modern Physical Metallurgy and Materials Engineering" (1999), Butterworth-Heinemann
- M. Topsakal, "First-principles approach to monitoring the band gap and magnetic state of a graphene nanoribbon via its vacancies", Phys. Rev. B : Condens. Matter Mater. Phys, 78, pp.235435~ (2008)[DOI]
- A. M. van der Zande, "Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide", Nat. Mater, 12, pp.554~561 (2013)[DOI]
- S. Wang, "Detailed atomic reconstruction of extended line defects in monolayer MoS2", ACS Nano, 10, pp.5419~5430 (2016)[DOI]
- W. Zhou, "Intrinsic structural defects in monolayer molybdenum disulfide", Nano Lett, 13, pp.2615~2622 (2013)[DOI]