Effects of a H₂SO₄ treatment on the optical properties in porous Si layers and electrical properties of diode devices fabricated with a H₂SO₄ treated porous Si layer
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The effects of a H₂SO₄ treatment on the optical properties in porous silicon (PS) layers were investigated by using photoluminescence (PL) measurements, and electrical properties of diode devices fabricated with a PS were investigated by current density-applied voltage (J-V) measurements. Scanning electron microscopy images showed that the PS layers were formed by electrochemical anodization. While the PL intensity of the PS layer immersed into H₂SO₄ solution was significantly increased in comparison with that of the as-formed PS layer, the PL peak position did not change regardless of variations in the H₂SO₄ treatment time due to the invariance of the crystal structure of the PS layer. The J-V curve for the indium-tin-oxide/ H₂SO₄ treated PS layer/n-Si/Al structure showed diode characteristics with a small turn-on voltage.
Abstract
The effects of a H₂SO₄ treatment on the optical properties in porous silicon (PS) layers were investigated by using photoluminescence (PL) measurements, and electrical properties of diode devices fabricated with a PS were investigated by current density-applied voltage (J-V) measurements. Scanning electron microscopy images showed that the PS layers were formed by electrochemical anodization. While the PL intensity of the PS layer immersed into H₂SO₄ solution was significantly increased in comparison with that of the as-formed PS layer, the PL peak position did not change regardless of variations in the H₂SO₄ treatment time due to the invariance of the crystal structure of the PS layer. The J-V curve for the indium-tin-oxide/ H₂SO₄ treated PS layer/n-Si/Al structure showed diode characteristics with a small turn-on voltage.
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