Synthesis and electronic transport properties of Sn-filled/Tedoped CoSb3
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Sn-filled/Te-doped CoSb3 skutterudites (SnzCo4Sb11.2Te0.8) were prepared by encapsulated induction melting, and their electronic transport properties were investigated. A single δ-phase was obtained successfully by a subsequent isothermal heat treatment at 773 K for 5 days. The Seebeck coefficient and Hall coefficient confirmed that all the samples exhibited n-type conductivity. Te atoms acted as electron donors by substituting for Sb atoms. The temperature dependence of the electrical resistivity suggested that SnzCo4Sb11.2Te0.8 is a highly degenerate semiconducting material. The lattice contribution was found to be dominant over the thermal conductivity of SnzCo4Sb11.2Te0.8.
Abstract
Sn-filled/Te-doped CoSb3 skutterudites (SnzCo4Sb11.2Te0.8) were prepared by encapsulated induction melting, and their electronic transport properties were investigated. A single δ-phase was obtained successfully by a subsequent isothermal heat treatment at 773 K for 5 days. The Seebeck coefficient and Hall coefficient confirmed that all the samples exhibited n-type conductivity. Te atoms acted as electron donors by substituting for Sb atoms. The temperature dependence of the electrical resistivity suggested that SnzCo4Sb11.2Te0.8 is a highly degenerate semiconducting material. The lattice contribution was found to be dominant over the thermal conductivity of SnzCo4Sb11.2Te0.8.
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