Thermoelectric properties of Sb-doped Mg2Si1-xSnx prepared by mechanical alloying and hot pressing
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Sb-doped Mg2Si1-xSnx solid solutions were prepared by mechanical alloying and hot pressing. The electrical conduction behavior changed from n-type to p-type with increasing Sn content. The electrical conductivity increased with an increase in Sn content at specific temperatures. Sb-doped Mg2Si1-xSnx solid solutions showed n-type conduction, and the carrier concentration was increased by the doped Sb acting as donors. The absolute value of the Seebeck coefficient decreased with increasing temperature. The lowest thermal conductivity of 1.3 W/mK was obtained by Sb doping. Mg2Si0.7Sn0.3 : Sb0.01 exhibited a maximum ZT of 0.56 at 723 K.
Abstract
Sb-doped Mg2Si1-xSnx solid solutions were prepared by mechanical alloying and hot pressing. The electrical conduction behavior changed from n-type to p-type with increasing Sn content. The electrical conductivity increased with an increase in Sn content at specific temperatures. Sb-doped Mg2Si1-xSnx solid solutions showed n-type conduction, and the carrier concentration was increased by the doped Sb acting as donors. The absolute value of the Seebeck coefficient decreased with increasing temperature. The lowest thermal conductivity of 1.3 W/mK was obtained by Sb doping. Mg2Si0.7Sn0.3 : Sb0.01 exhibited a maximum ZT of 0.56 at 723 K.
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