Low-temperature sintering and electrical properties of PGO-doped PNN-PZT ceramics
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Densification, microstructures and electrical properties were investigated in Pb5Ge3O11 (PGO)-doped Pb(Ni1/3Nb2/3)O3-PbZrO3-PbTiO3 (PNN-PZT) ceramics sintered at 900 oC and lower. PNN-PZT ceramics with a density of about 7.772 g/cm3or higher, could be prepared at a sintering temperature of 800 oC by adding 1-3 wt% PGO. PGO-doping increased effectively the sintered density and the average grain size of PNN-PZT ceramics at a low sintering temperature of around 800 oC. Bulk density, dielectric constant and piezoelectric constant of the 1 wt% PGO doped PNN-PZT ceramic were 8.02 g/cm3, 2231 and 387 pC/N at a sintering temperature of 850 oC.
Abstract
Densification, microstructures and electrical properties were investigated in Pb5Ge3O11 (PGO)-doped Pb(Ni1/3Nb2/3)O3-PbZrO3-PbTiO3 (PNN-PZT) ceramics sintered at 900 oC and lower. PNN-PZT ceramics with a density of about 7.772 g/cm3or higher, could be prepared at a sintering temperature of 800 oC by adding 1-3 wt% PGO. PGO-doping increased effectively the sintered density and the average grain size of PNN-PZT ceramics at a low sintering temperature of around 800 oC. Bulk density, dielectric constant and piezoelectric constant of the 1 wt% PGO doped PNN-PZT ceramic were 8.02 g/cm3, 2231 and 387 pC/N at a sintering temperature of 850 oC.
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