Growth behavior of low-dimensional nano ZnO on a biomorphic porous carbon (BPC) matrix by a hydrothermal synthesis method
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In this paper, the growth behavior of low-dimensional nano ZnO on biomorphic porous carbon matrix (BPC matrix) by a hydrothermal synthesis method is studied. The Influence of the growth time, type of BPC matrix and its carbonization temperature on the growth behavior of nano ZnO are studied through XPS, XRD, TGA, SEM etc. The results show that hexagonal ZnO is obtained on a BPC matrix and the grain size is about 8 nm. Zero-dimensional nano-ZnO particles can grow on the inner walls of BPC matrix derived from hardwood, it is distributed evenly and combines well with the walls; while onedimensional nano rods or two-dimensional nano sheets can grow on that of bamboo and two-dimensional nano sheets can grow on that of pine. The morphology, size and amount of nano-ZnO crystals are mainly controlled by growth time and matrix carbonization temperature, respectively. The growth mechanism of nano-ZnO crystal on a BPC matrix is also discussed.
Abstract
In this paper, the growth behavior of low-dimensional nano ZnO on biomorphic porous carbon matrix (BPC matrix) by a hydrothermal synthesis method is studied. The Influence of the growth time, type of BPC matrix and its carbonization temperature on the growth behavior of nano ZnO are studied through XPS, XRD, TGA, SEM etc. The results show that hexagonal ZnO is obtained on a BPC matrix and the grain size is about 8 nm. Zero-dimensional nano-ZnO particles can grow on the inner walls of BPC matrix derived from hardwood, it is distributed evenly and combines well with the walls; while onedimensional nano rods or two-dimensional nano sheets can grow on that of bamboo and two-dimensional nano sheets can grow on that of pine. The morphology, size and amount of nano-ZnO crystals are mainly controlled by growth time and matrix carbonization temperature, respectively. The growth mechanism of nano-ZnO crystal on a BPC matrix is also discussed.
참고문헌 (25)
- T. J. Sun, , J. Phys. Chem. C, 112, pp.715~721 (2008)
- B.Q. Cao, , J. Phys. Chem. C, 111, pp.2470~2476 (2007)
- L. Zhang, "Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate insulator", Current Applied Physics, 10(5), pp.1306~1308 (2010), 한국물리학회
- D.S. Kang, , J. Alloys Compd, 509, pp.5137~5141 (2011)
- J. Zhang, , Phys. Lett. A, 299, pp.276~281 (2002)
- Y. X. Chen, , Mater. Lett, 62, pp.2369~2371 (2008)
- M. G. Fu, , Mater. Res. Bull, 43(4), pp.912~918 (2008)
- J. S. Jeong, , Chem. Mater, 17, pp.2752~2756 (2005)
- J.Y. Lao, , Nanoletter, 3, pp.235~238 (2003)
- X.H. Zhang, , Appl. Phys. Lett, 87, pp.1~3 (2005)
- C. Li, , J. Phys. Chem. C, 111, pp.12566~12571 (2007)
- C.H. Chao, , Curr. Appl. Phy, 11, pp.S136~S139 (2011)
- M. Jayalakshmi, , Int. J. Electrochem. Sci, 3, pp.96~103 (2008)
- D. Kalpana, , Electrochim. Acta, 52, pp.1309~1315 (2006)
- N. Sobana, , Sol. Energy Mater. Sol. Cells, 91, pp.727~734 (2007)
- K. Byrappa, , J. Mater. Sci, 41, pp.1355~1362 (2006)
- M, Li, , Rare met. mater. eng, 38(4), pp.734~737 (2009)
- P.Z. Gao, , H. N. Xiao. Ceram. Intern, 34, pp.1975~1981 (2008)
- Y. Zeng, , L. Qiao. Mater. Let, 63, pp.843~846 (2009)
- P.Z. Gao, , Mater. Re. Bull, 44, pp.644~648 (2009)
- Z.J. Li, , Mater. Let, 65, pp.809~811 (2011)
- F. Davar, , J. Alloys Compd, 509, pp.2487~2492 (2011)
- J. Xie, , Appl. Surf. Sci, 257, pp.6358~6363 (2011)
- U.N. Maiti, , Appl. Surf. Sci, 254, pp.7266~7271 (2008)
- S.L. Bai, , Sen. Actu B, 146, pp.129~137 (2010)