Electrical properties of predominantly (100)-oriented of Ca2+ modified SrBi4Ti4O15 thin film deposited on Pt/Ti/SiO2/Si substrates
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The predominantly (100)-oriented of Ca2+ modified SrBi4Ti4O15 (Ca0.4Sr0.6Bi4Ti4O15) thin films were fabricated by optimizing the annealing treatment using the metal organic decomposition method. We studied the capacitance-voltage (C-V) curve, the dielectric constant (ε) and the dissipation fcator (tanδ), when the thin film exhibits preferred orientation, especially. The C-V curve shows a typical butterfly loop, and the ε, tanδ are about 235 and 0.033, respectively. Meanwhile, the P-E hysteresis loop as the important characteristic was characterized. The thin film displays a well-saturated P-E hysteresis loop with remanent polarization 20.3 µC/cm2 and coercive field 132 kV/cm.
Abstract
The predominantly (100)-oriented of Ca2+ modified SrBi4Ti4O15 (Ca0.4Sr0.6Bi4Ti4O15) thin films were fabricated by optimizing the annealing treatment using the metal organic decomposition method. We studied the capacitance-voltage (C-V) curve, the dielectric constant (ε) and the dissipation fcator (tanδ), when the thin film exhibits preferred orientation, especially. The C-V curve shows a typical butterfly loop, and the ε, tanδ are about 235 and 0.033, respectively. Meanwhile, the P-E hysteresis loop as the important characteristic was characterized. The thin film displays a well-saturated P-E hysteresis loop with remanent polarization 20.3 µC/cm2 and coercive field 132 kV/cm.
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