Effect of Zn dopant on the dielectric properties of (Ca0.8Sr0.2Ti0.8Zr0.2)O3 ceramics
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Zn doped (Ca0.8Sr0.2Ti0.8Zr0.2)O3 (CSTZ) ceramics were fabricated using the conventional solid state reaction method. Dopant(Zn), which plays the role of acceptor, substitutes the B-site in the perovskite structure and generates oxygen vacancies dueto the charge compensation. With increasing concentration of Zn, the grain size and relative density of doped CSTZ was increasedbecause oxygen vacancies assist in the migration of ion during sintering. As a result, the dielectric constant increased and thedielectric loss decreased. When the concentration of Zn is 0.25 mol%, the dielectric constant and loss of Zn doped CSTZ at 1,000Hzare 199 and 0.076, respectively. Therefore, Zn doped CSTZ has the possibility of being used as a microwave capacitor
Abstract
Zn doped (Ca0.8Sr0.2Ti0.8Zr0.2)O3 (CSTZ) ceramics were fabricated using the conventional solid state reaction method. Dopant(Zn), which plays the role of acceptor, substitutes the B-site in the perovskite structure and generates oxygen vacancies dueto the charge compensation. With increasing concentration of Zn, the grain size and relative density of doped CSTZ was increasedbecause oxygen vacancies assist in the migration of ion during sintering. As a result, the dielectric constant increased and thedielectric loss decreased. When the concentration of Zn is 0.25 mol%, the dielectric constant and loss of Zn doped CSTZ at 1,000Hzare 199 and 0.076, respectively. Therefore, Zn doped CSTZ has the possibility of being used as a microwave capacitor
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