Fabrication of silicon carbide particles from recycled polysilicon photovoltaic cells
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In this study, a recycling method for the recovery of polysilicon (poly-Si) wafers from end-of-life poly-Si photovoltaic (PV) cellsand the synthesis of high-purity silicon carbide (SiC) using the recovered poly-Si wafers are reported. First, an end-of-life poly-Si PV module was etched by acid treatment, using a mixture of hydrofluoric acid (HF) and nitric acid (HNO3), to recover thepoly-Si wafer. The purified wafer was milled using high-energy milling to form Si powders to prepare a fine SiC powder. Then,the SiC powder was synthesised using spark plasma sintering with a mixture of poly-Si powder and carbon black. By analysingthe morphology and crystal structure of the SiC powders synthesised at different reaction temperatures, the optimumtemperature for synthesising the fine SiC powder was determined. After milling, the poly-Si and SiC powders were washedusing a HF solution to remove the oxide impurities from the powders. Thus, a fine SiC powder with an oxygen content of0.11% was obtained.
Abstract
In this study, a recycling method for the recovery of polysilicon (poly-Si) wafers from end-of-life poly-Si photovoltaic (PV) cellsand the synthesis of high-purity silicon carbide (SiC) using the recovered poly-Si wafers are reported. First, an end-of-life poly-Si PV module was etched by acid treatment, using a mixture of hydrofluoric acid (HF) and nitric acid (HNO3), to recover thepoly-Si wafer. The purified wafer was milled using high-energy milling to form Si powders to prepare a fine SiC powder. Then,the SiC powder was synthesised using spark plasma sintering with a mixture of poly-Si powder and carbon black. By analysingthe morphology and crystal structure of the SiC powders synthesised at different reaction temperatures, the optimumtemperature for synthesising the fine SiC powder was determined. After milling, the poly-Si and SiC powders were washedusing a HF solution to remove the oxide impurities from the powders. Thus, a fine SiC powder with an oxygen content of0.11% was obtained.
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