Molecular dynamics simulation of nanoindentation influence of indenter velocity on 3C-SiC ceramics
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To investigate the effect of nanoindentation velocity on dislocation nucleation, development and elastic deformation of 3C-SiCceramic specimens, the nanoindentation loading process of 3C-SiC ceramic specimens under a diamond indenter is simulated. The molecular dynamics models of diamond indenter and 3C-SiC amorphous layer are constructed, and the nanoindentationconditions such as potential function, relaxation synthesis and time step are optimized. The dislocation analysis method andthe identify diamond structure method are used to analyze the internal structure change of the specimen and the dislocationgeneration, change and transfer of different positions after nanoindentation simulation. It is found that with the increase ofindenter velocity, the elastic threshold decreases and the plasticity increases, and tends to be stable at a certain stage. The loadfluctuation tends to be flat, the total amount of dislocation generated continues to decrease, and the diffusion rate of dislocationslows down. The length of 1/2<110> and 1/6<112> type dislocation becomes shorter, indentation formation of the 'lotus' shapemore regularly. The elastic-plastic threshold of 3C-SiC ceramic material also changes with the change of indenter velocity, andthe dislocation formation rate and total amount also affect while show a certain regularity.
Abstract
To investigate the effect of nanoindentation velocity on dislocation nucleation, development and elastic deformation of 3C-SiCceramic specimens, the nanoindentation loading process of 3C-SiC ceramic specimens under a diamond indenter is simulated. The molecular dynamics models of diamond indenter and 3C-SiC amorphous layer are constructed, and the nanoindentationconditions such as potential function, relaxation synthesis and time step are optimized. The dislocation analysis method andthe identify diamond structure method are used to analyze the internal structure change of the specimen and the dislocationgeneration, change and transfer of different positions after nanoindentation simulation. It is found that with the increase ofindenter velocity, the elastic threshold decreases and the plasticity increases, and tends to be stable at a certain stage. The loadfluctuation tends to be flat, the total amount of dislocation generated continues to decrease, and the diffusion rate of dislocationslows down. The length of 1/2<110> and 1/6<112> type dislocation becomes shorter, indentation formation of the 'lotus' shapemore regularly. The elastic-plastic threshold of 3C-SiC ceramic material also changes with the change of indenter velocity, andthe dislocation formation rate and total amount also affect while show a certain regularity.
참고문헌 (30)
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