Preparation and aging properties of BiFe1-xAlxO3 ferroelectric thin films
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Thin films of BiFe1-xAlxO3 (BFAlO, x = 0-0.03) were fabricated on ITO-coated glass substrates using the sol-gel technique. Comprehensive analyses conducted through X-ray diffraction (XRD), scanning electron microscopy (SEM), and Ramanspectroscopy confirmed that all BFAlO thin film samples consist of both R3c and Pnma phases. The incorporation of Alwas found to refine the grain size, markedly enhancing the density of the BFAlO thin film samples. X-ray photoelectronspectroscopy (XPS) analysis revealed that at an Al doping level of 0.02, there was a substantial reduction in the concentrationof oxygen vacancies and Fe2+ ions within the films. These BFAlO thin film samples demonstrated a robust remnant polarizationstrength (2Pr = 132.94 μC/cm²) and a lower coercive field strength (2Ec = 690.52 kV/cm) when subjected to an applied electricfield of 640 kV/cm. Additionally, after an aging period of 75 days, the samples showed commendable resistance to aging. The findings suggest that a moderate level of Al doping can significantly improve the ferroelectric stability of BFO films andbolster their resistance to the aging process.
Abstract
Thin films of BiFe1-xAlxO3 (BFAlO, x = 0-0.03) were fabricated on ITO-coated glass substrates using the sol-gel technique. Comprehensive analyses conducted through X-ray diffraction (XRD), scanning electron microscopy (SEM), and Ramanspectroscopy confirmed that all BFAlO thin film samples consist of both R3c and Pnma phases. The incorporation of Alwas found to refine the grain size, markedly enhancing the density of the BFAlO thin film samples. X-ray photoelectronspectroscopy (XPS) analysis revealed that at an Al doping level of 0.02, there was a substantial reduction in the concentrationof oxygen vacancies and Fe2+ ions within the films. These BFAlO thin film samples demonstrated a robust remnant polarizationstrength (2Pr = 132.94 μC/cm²) and a lower coercive field strength (2Ec = 690.52 kV/cm) when subjected to an applied electricfield of 640 kV/cm. Additionally, after an aging period of 75 days, the samples showed commendable resistance to aging. The findings suggest that a moderate level of Al doping can significantly improve the ferroelectric stability of BFO films andbolster their resistance to the aging process.
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