Resistive switching random access memory based on Sn-incorporated Cs(PbxSn1-x)Br3 perovskite thin films
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We investigated the performance of resistive random access memory (RRAM) consisting of Sn-incorporated Cs(PbxSn1-x)Br3thin films. The uniform Cs(PbxSn1-x)Br3 perovskite thin films with various Sn contents were formed by using the solution-basedspin coating method. The structural and optical investigations showed that the Sn element was successfully incorporated intothe CsPbBr3 lattice. As the Sn content increases, secondary phases like SnBr2 and CsSn2Br5 w ere al so f ormed in t heCs(PbxSn1-x)Br3 perovskite thin films. RRAM device consisting of the pristine CsPbBr3 thin film showed typical RRAMswitching behavior and an operating voltage of about 0.7 V. The RRAM switching behavior of the CsPbBr3 was suggestedbased on the migration of halide vacancies, which forms the conducting filament when the electric field is applied. As thecontent of the Sn element increases, the transition voltage shifted to the lower voltage side to about 0.3~0.4 V. The switchingperformances of the RRAM device were affected by the Sn content in the Cs(PbxSn1-x)Br3 perovskite thin films due to theformation of defects and secondary phases.
Abstract
We investigated the performance of resistive random access memory (RRAM) consisting of Sn-incorporated Cs(PbxSn1-x)Br3thin films. The uniform Cs(PbxSn1-x)Br3 perovskite thin films with various Sn contents were formed by using the solution-basedspin coating method. The structural and optical investigations showed that the Sn element was successfully incorporated intothe CsPbBr3 lattice. As the Sn content increases, secondary phases like SnBr2 and CsSn2Br5 w ere al so f ormed in t heCs(PbxSn1-x)Br3 perovskite thin films. RRAM device consisting of the pristine CsPbBr3 thin film showed typical RRAMswitching behavior and an operating voltage of about 0.7 V. The RRAM switching behavior of the CsPbBr3 was suggestedbased on the migration of halide vacancies, which forms the conducting filament when the electric field is applied. As thecontent of the Sn element increases, the transition voltage shifted to the lower voltage side to about 0.3~0.4 V. The switchingperformances of the RRAM device were affected by the Sn content in the Cs(PbxSn1-x)Br3 perovskite thin films due to theformation of defects and secondary phases.
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