LED용 precursor 재이용을 위한 회수 및 정제 공정 개발
Development of Reuse Process Through Recovery and Refinement of Precursor for LED
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초록
본 연구에서는 metal organic chemical vapor deposition(유기금속화학증기증착, MOCVD) 장치로 부터 LED용 GaN epi 성장 시원료로 사용되는 트리메틸갈륨에 대해서 사용 후 잔량을 회수하고 정제하여 재이용할 수 있는 공정 및 시스템을 개발하고자 한다. 본 공정에서 회수된 트리메틸갈륨에 대해서 화학적, 구조적 특성 평가를 통해서 재이용 가능여부를 검토하였다. 먼저 ICP-MS, ICPAES를이용하여 순도를 분석한 결과 7N(99.99999%)의 고순도 트리메틸갈륨임을 확인했으며, NMR 분석을 통해서 트리메틸갈륨의구조적 변화를 확인한 결과, 구조 변화 없이 순수 (CH3)3Ga(트리메틸갈륨) 구조임을 확인하였다. 또한 회수 트리메틸갈륨에 대한 신뢰성 검토를 위해서 MOCVD 공정을 이용하여 u-GaN를 증착시키고, 결정 특성 평가 및 광학·전기적 특성 평가를 실시하였으며 그결과, 재이용이 가능함을 알 수 있었다.
Abstract
The purpose of this research is to develop a process and a system to collect, purify and reuse the residual quantity of trimethylgallium,used as a raw material, upon GaN epitaxial growth for LED from a metal organic chemical vapor deposition(MOCVD) equipment. This research reviews whether TMGa collected from the process can be used through a chemical andstructural characteristics evaluation. As a result of analyzing the purity using ICP-MS and ICP-AES, 7N high purity (99.99999%)of TMGa was obtained. According to checking the structural change of TMGa through NMR analysis, TMGa having pure(CH3)3Ga structure was obtained without structural change. For reliability review of the collected TMGa, u-GaN was depositedusing the MOCVD process and an structural, optical and electrical characteristics evaluation was conducted. As a result, it wasfound out that the reuse was possible.
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