A Study to Recover Si from End-of-Life Solar Cells using Ultrasonic Cleaning Method
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In this study, we determine the optimal process conditions for selectively recovering Si from a solar cell surface by removal of impurities (Al, Zn, Ag, etc.). To selectively recover Si from solar cells, leaching is performed using HCl solution and an ultrasonic cleaner. After leaching, the solar cells are washed using distilled water and dried in an oven. Decompression filtration is performed on the HCl solution, and ICP-OES (Inductively Coupled Plasma Optical Emission spectroscopy) full scan analysis is performed on the filtered solution. Furthermore, XRD (X-ray powder diffraction), XRF (X-ray fluorescence), and ICP-OES are performed on the dried solar cells after crushing, and the purity and recovery rate of Si are obtained. In this experiment, the concentration of acid solution, reaction temperature, reaction time, and ultrasonic intensity are considered as variables. The results show that the optimal process conditions for the selective recovery of Si from the solar cells are as follows: the concentration of acid solution = 3 M HCl, reaction temperature = 60℃, reaction time = 120 min, and ultrasonic intensity = 150 W. Further, the Si purity and recovery rate are 99.85 and 99.24%, respectively.
Abstract
In this study, we determine the optimal process conditions for selectively recovering Si from a solar cell surface by removal of impurities (Al, Zn, Ag, etc.). To selectively recover Si from solar cells, leaching is performed using HCl solution and an ultrasonic cleaner. After leaching, the solar cells are washed using distilled water and dried in an oven. Decompression filtration is performed on the HCl solution, and ICP-OES (Inductively Coupled Plasma Optical Emission spectroscopy) full scan analysis is performed on the filtered solution. Furthermore, XRD (X-ray powder diffraction), XRF (X-ray fluorescence), and ICP-OES are performed on the dried solar cells after crushing, and the purity and recovery rate of Si are obtained. In this experiment, the concentration of acid solution, reaction temperature, reaction time, and ultrasonic intensity are considered as variables. The results show that the optimal process conditions for the selective recovery of Si from the solar cells are as follows: the concentration of acid solution = 3 M HCl, reaction temperature = 60℃, reaction time = 120 min, and ultrasonic intensity = 150 W. Further, the Si purity and recovery rate are 99.85 and 99.24%, respectively.
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