정전분무 장치를 이용한 C축 일방향 바륨페라이트(BaFe12O19)박막형성
Preparation of C-plane oriented BaFe12O19 film by electrospray deposition of colloidal precursor particles
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New process consisting of electrospray and epitaxial crystal growth processes was applied to the preparation of c-plane oriented barium ferrite (BaFe12O19) thin film for high density magnetic recording media. Sodium citrate aided process was proper to preparation of amorphous BaFe12O19 nanoparticles with geometric mean diameter of 3 nm and geometric standard deviation of 1.1. The electrospray was applicable to the prepare of amorphous BaFe12O19 thin film on a substrate, and the film thickness could be controlled by adjusting the electrospray deposition time. The c-plane oriented BaFe12O19 thin film was successfully prepared by 3 step annealing process of the BaFe12O19 amorphous film on a sapphire(Al2O3) substrate; annealing at 350℃ for 30 min, annealing at 500℃ for 30 min, and annealing at 700℃for 60 min.
Abstract
New process consisting of electrospray and epitaxial crystal growth processes was applied to the preparation of c-plane oriented barium ferrite (BaFe12O19) thin film for high density magnetic recording media. Sodium citrate aided process was proper to preparation of amorphous BaFe12O19 nanoparticles with geometric mean diameter of 3 nm and geometric standard deviation of 1.1. The electrospray was applicable to the prepare of amorphous BaFe12O19 thin film on a substrate, and the film thickness could be controlled by adjusting the electrospray deposition time. The c-plane oriented BaFe12O19 thin film was successfully prepared by 3 step annealing process of the BaFe12O19 amorphous film on a sapphire(Al2O3) substrate; annealing at 350℃ for 30 min, annealing at 500℃ for 30 min, and annealing at 700℃for 60 min.
참고문헌 (9)
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