전기화학적 제조를 통한 나노다공성 텅스텐 산화물 성장의 전열처리 영향

김경민; 최진섭; 김선미

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전기화학적 제조를 통한 나노다공성 텅스텐 산화물 성장의 전열처리 영향

The Effects of Pre-Annealing on Electrochemical Preparation for Nanoporous Tungsten Oxide Films

한국전기화학회 (The Korean Electrochemical Society)|2011.08|전기화학회지 (Journal of the Korean Electrochemical Society)|제14권 제3호|pp. 125-130

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키워드

Tungsten oxide Pre-anealing Light-induced anodizaton

주제분류화학

초록

본 연구에서는 텅스텐 금속박막을 200oC에서부터 600oC의 온도 구간에서 전열처리 (Preannealing)한 후에, 빛의 조사 유무에 따라 양극산화를 진행하여 생성된 텅스텐 산화물의 표면과두께에 대해 관찰하였다. 결과적으로 6시간의 동일한 반응시간 동안, 400oC에서 전열처리 한 후에빛의 조사 없이 양극산화 하였을 때, 1.83 μm 두께의 텅스텐 산화물을 제조할 수 있는 것을발견하였다. 더욱이 전열처리를 하게 되면 더 두꺼운 산화물을 제조 할 수 있으나, 빛을 조사하게 되면 전열처리에 의해 생성된 산화물을 결정화시켜 오히려 산화물 성장에 방해가 되었다. 이러한 차이점에 대해 결정구조 및 메커니즘에 근거하여 설명하였다.

Abstract

We describe that the surface and thickness of nanoporous WO_3 fabricated by both light-induced and light-absent anodization are affected by pre-annealing process from 200℃ to 600℃. As a result, the nanoporous WO_3 with a thickness of 1.83 μm can be achieved by anodization for 6 hours after pre-annealing at 400℃ without illumination of light. Moreover, the thickness of nanoporous WO_3 fabricated by pre-annealing is thicker than that of WO_3 prepared by non-annealing process. However, the light illumination during anodization leads to convert the crystalline structure obtained by pre-annealing, which interfere the growth of nanoporous WO_3. In this paper, we discuss about the growth mechanism of these different nanoporous WO_3 films.

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초록

Abstract

참고문헌 (27)

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