열처리 조건에 따른 3C-SiC 박막을 이용한 그래핀 합성
Synthesis of Graphene Using 3C-SiC Thin Films with Thermal Annealing Conditions
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초록
This paper describes the synthesis and characterization of graphene by RTA process. Amorphous 3C-SiC were deposited using APCVD for carbon source and Ni layer were employed for transition layer. Various parameters of the ramping speed, the annealing time and the cooling speed are evaluated for the optimized combination allowed for the reproducible fabrication of graphene using 3C-SiC thin film. For analysis of crystalline Raman spectra was employed. Transferred graphene shows a high IG/ID ratio of 2.73. SEM and TEM images show the optical transparency and 6 carbon network, respectively. Au electrode deposited on the transferred graphene shows linear I-V curve and its resistance is 358 Ω.
Abstract
This paper describes the synthesis and characterization of graphene by RTA process. Amorphous 3C-SiC were deposited using APCVD for carbon source and Ni layer were employed for transition layer. Various parameters of the ramping speed, the annealing time and the cooling speed are evaluated for the optimized combination allowed for the reproducible fabrication of graphene using 3C-SiC thin film. For analysis of crystalline Raman spectra was employed. Transferred graphene shows a high IG/ID ratio of 2.73. SEM and TEM images show the optical transparency and 6 carbon network, respectively. Au electrode deposited on the transferred graphene shows linear I-V curve and its resistance is 358 Ω.
참고문헌 (8)
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