Electrical and Optical Properties of Asymmetric Dielectric/Metal/Dielectric (D/M/D) Multilayer Electrode Prepared by Radio-Frequency Sputtering for Solar Cells
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Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/WO3 have been fabricated by radiofrequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide (WO3) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/WO3 (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (λ = 380~770 nm), quite low electrical resistivity of ~ 10-5 Ω cm and the corresponding figure of merit (T10/Rs) is equivalent to 3.0×10-2Ω-1. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.
Abstract
Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/WO3 have been fabricated by radiofrequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide (WO3) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/WO3 (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (λ = 380~770 nm), quite low electrical resistivity of ~ 10-5 Ω cm and the corresponding figure of merit (T10/Rs) is equivalent to 3.0×10-2Ω-1. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.
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