계단형 양자우물 구조가 적용된 센서 광원 용 발광다이오드 소자
Light Emitting Diode with Multi-step Quantum Well Structure for Sensing Applications
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초록
Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW)structure have been studied for light source in bio-sensing systems. Novel GaN/In0.1GaN/In0.2GaN/In0.1GaN/GaN and Al0.1GaN/GaN/In0.2GaN/GaN/Al0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence,and external quantum efficiency were compared with those of the conventional GaN/In0.2GaN/GaN MQW structureusing device simulation. The LED with the GaN/In0.1GaN/In0.2GaN/In0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 ×1028 cm-3·s-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiencydroop was relieved by the suggested stepped MQW structure.
Abstract
Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW)structure have been studied for light source in bio-sensing systems. Novel GaN/In0.1GaN/In0.2GaN/In0.1GaN/GaN and Al0.1GaN/GaN/In0.2GaN/GaN/Al0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence,and external quantum efficiency were compared with those of the conventional GaN/In0.2GaN/GaN MQW structureusing device simulation. The LED with the GaN/In0.1GaN/In0.2GaN/In0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 ×1028 cm-3·s-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiencydroop was relieved by the suggested stepped MQW structure.
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