메틸트리클로로실란을 이용한 화학증착 탄화규소의 증착율 및 굽힘강도 특성에 미치는 온도의 영향
Effect of Temperature on the Deposition Rate and Bending Strength Characteristics of Chemical Vapor Deposited Silicon Carbide Using Methyltrichlorosilane
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초록
화학기상증착 탄화규소(CVD-SiC)의 높은 증착율과 우수한 굽힘강도 특성을 얻기 위해 증착온도에 대한영향을 연구하였다. Hot-wall CVD 방법으로 메틸트리클로로실란(MTS : CH3SiCl3)을 이용하여 1250~1400oC 조건에서 제조된 탄화규소는 95.7~117.2 μm/hr 정도의 증착율을 보였다. 율속반응은 1300oC 미만에서는 표면반응, 그이상의 온도에서는 물질전달 지배영역 특성을 나타내었다. Arrhenius plot을 통해 계산한 활성화 에너지는 각각 11.26 kcal/mole과 4.47 kcal/mole이였다. 증착온도별 표면 형상은 1250oC pebble에서 1300oC facet 구조로 변하였고, 1350oC 이상에서는 multi-facet 구조를 나타내었다. 단면 형상은 1300oC 이하에서 columnar, 1350oC 이상에서 isometric 구조를 보였다. 결정상은 모두 β-SiC로 확인되었지만 결정성장 방향은 1250oC (111)에서 1300oC 이상부터 (220) peak 가 관찰되었으며, 1400oC에서는 (220)으로 완전히 변함을 알 수 있었다. 굽힘강도 특성은 증착온도가 증가할수록치밀화되고, columnar에서 isometric 조직으로 변화되면서 1350oC에서 최대값을 나타내었으며, 1400oC에서는 grain size 증가와 결정성장 방향이 최밀충진면인 (111)에서 (220)으로 완전히 변하면서 감소된 것으로 보인다.
Abstract
The effects of deposition temperature on chemical vapor deposited silicon carbide (CVD-SiC) were studied to obtain high deposition rates and excellent bending strength characteristics. Silicon carbide prepared at 1250~1400oC using methyltrichlorosilane(MTS : CH3SiCl3) by hot-wall CVD showed deposition rates of 95.7~117.2 μm/hr. The rate-limiting reaction showed the surface reaction at less than 1300oC, and the mass transfer dominant region at higher temperature. The activation energies calculated by Arrhenius plot were 11.26 kcal/mole and 4.47 kcal/mole, respectively. The surface morphology by the deposition temperature changed from 1250oC pebble to 1300oC facet structure and multi-facet structure at above 1350oC. The cross sectional microstructures were columnar at below 1300oC and isometric at above 1350oC. The crystal phases were all identified as β-SiC, but (220) peak was observed from 1300°C or higher at 1250oC (111) and completely changed to (220) at 1400°C. The bending strength showed the maximum value at 1350oC as densification increased at high temperatures and the microstructure changed from columnar to isometric. On the other hand, at 1400oC, the increasing of grain size and the direction of crystal growth were completely changed from (111) to (220), which is the closest packing face, so the bending strength value seems to have decreased.
참고문헌 (25)
- Kim, Y.W., "Microstructure and High-temperature Strength of Silicon Car- bide with 2000 ppm Yttria", Journal of the European Ceramic Society, 37, pp.4449~4455 (2017)[DOI]
- Eichentopf, I.M., "Etching Mecha- nisms during Plasma Jet Machining of Silicon Carbide", Surface & Coatings Technology, 205, pp.S430~S434 (2011)[DOI]
- Yu, W., "Silicon Car- bide Nanowires Suspensions with High Thermal Transport Properties", Applied Thermal Engineering, 94, pp.350~354 (2016)[DOI]
- Parshin, V., "Silicon Carbide for High-power Applications at MM and THz Ranges", Diamond & Related Materials, 80, pp.1~4 (2017)[DOI]
- Kim, J.I., "Oxidation Behavior of SiC Coated Carbon", carbon Composite by Pack-cementation Method, 2000, pp.13(2), 22~29
- Park, I.S., "Oxidation and Ablation Behavior of SiC-Coated Carbon", Car- bon Composites, 1998, pp.11(4), 64~73
- Oh, J.H., "Fabrication of CVD SiC Double Layer Structure from the Microstructural Change Through Input Gas Ratio", Journal of the Korean Ceramic Society, 36(9), pp.937~945 (1999)
- Lee, Y.S., "Effects of CVD Parameters on Deposition Rate and Thin Film Characteristics of the Chemical Vapour Deposited SiC on C", C Composites, 1994, pp.33(1), 1~8
- Kim, W.J., "Deposition of Large Area SiC Thick Films by Low Pressure Chemical Vapor Deposition (LPCVD) Method", Journal of the Korean Ceramic Society, 38(5), pp.485~491 (2001)
- 김대종, "저압 화학기상증착법을 이용한 β-SiC의 증착 및 결정 성장 방위에 따른 기계적 특성 변화", 한국세라믹학회지, 50(1), pp.43~49 (2013), 한국세라믹학회[DOI]
- 이현근, "화학증착법에 의하여 제조된 탄화규소 코팅층의 기계적 특성", 한국세라믹학회지, 43(8), pp.492~497 (2006), 한국세라믹학회
- Choi, B.J., "Chemical Vapor Deposition of Silicon Carbide by the Pyrolysis of Meth- ylchlorosilanes", Journal of the Korean Ceramic Society, 32(4), pp.489~497 (1995)
- Lee, M.Y., "Effect of Total Reaction Pressure on the Microstructure of the SiC Deposited Layers by Low Pressure Chemical Vapor Deposition", Journal of the Korean Ceramic Society, 38(4), pp.388~392 (2001)
- Er, K.H., "Effect of Partial Pressure of the Reac- tant Gas on the Kinetic Model and Mechanical Properties of the Chemical Vapor Deposited Silicon Carbide", Journal of the Korean Ceramic Society, 28(6), pp.429~436 (1991)
- 김연구, "피복입자핵연료에서 증착조건이 탄화규소층의 특성에 미치는 영향", 한국분말재료학회지, 23(5), pp.384~390 (2016), 한국분말재료학회
- Lee, Y.J., "The Effect of Diluent Gases of <TEX>$H_{2}$<", TEX> or <TEX>$N_{2}$<, Journal of the Korean Ceramic Society, pp.1998, 35(7)[DOI]
- Choi, D.J., "The Effect of Diluent Gases on the Growh Behavior of CVD SiC", Journal of the Korean Ceramic Society, 34(2), pp.131~138 (1997)
- Neyret, E., "Deposition, Evaluation and Control of 4H and 6H SiC Epitaxial Layers for Device Applications", Journal of Materials Science and Engineering, B80, pp.332~336 (2001)
- Silicon Carbide Components for a Semiconductor Manufacturing Process, "Materials Technical Analysis Reports (in Korean), KISTI, IOD Report (Serial#:4-0001) Seoul", Ryu, J.Y., 2005, pp.24~39
- Drieux, P., "Synthesis and Characterization of Monolithic CVD-SiC Tubes", Journal of the European Ceramic Society, 36, pp.1873~1883 (2016)[DOI]
- Cheng, H., "Preparation of Highly Oriented <TEX>${\beta}$<", TEX>-SiC Bulks by Halide Laser Chemical Vapor Deposition, 2017, pp.37, 509~515
- Wellmann, P.J., "Vapor Growth of SiC Bulk Crystals and Its Challenge of Doping", Surface & Coatings Technology, 201, pp.4026~4031 (2006)[DOI]
- Schuh, P., "Sublimation Growth of Bulk 3C-SiC using 3C-SiC-on-Si (100) Seeding Layers", Journal of Crystal Growth, 478, pp.159~162 (2017)[DOI]
- Tokuda, Y., "Stable and High-speed SiC Bulk Growth without Dendrites by the HTCVD Method", Journal of Crystal Growth, 448, pp.29~35 (2016)[DOI]
- Thornton, J.A., "High Rate Thick Film Growth", Annual Review of Materials Science, pp.239~260 (1977)