Si0.8Ge0.2계 합금에서 열전특성에 미치는 B의 영향
Influence of Boron Content on the Thermoelectric Properties of p-type Si0.8Ge0.2 Alloy
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Abstract
P-type thermoelectric material Si0.8Ge0.2 was sintered by Hot Press process (HP) and the effect of boron (0.25~2 at%) addition on the thermoelectric properties were reported. To enhance the thermoelectric performances, the Si0.8Ge0.2 alloys were fabricated by mechanical alloying (MA) and HP. The carrier of p-type SiGe alloy was controlled by B-doping. The effect of sintering condition and thermoelectric properties were investigated. B-doped SiGe alloys exhibited positive seebeck coefficient. The electrical conductivity and thermal conductivity were increased at the small amount of boron content (0.25~0.5 at%). However, they were decreased over 0.5 at% boron content. As a result, the small addition of boron improved the Z value. The Z value of 0.5 at% B doped Si0.8Ge0.2 alloy was 0.910-4/K, the highest value among the prepared alloys.
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