Ru(EtCp)2 전구체를 이용한 PEALD Ru 공정 최적화에 관한 연구
Optimization of PEALD-Ru Process using Ru(EtCp)2
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Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using Ru(EtCp)2 and NH3 plasma. To optimize Ru PEALD process, the effect of growth temperature, NH3 plasma power and NH3 plasma time on the growth rate and preferred orientation of the deposited film was systemically investigated. At a growth temperature of 270°C and NH3 plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat SiO2/Si substrate when the Ru(EtCp)2 and NH3 plasma time was 7 and 10 sec, respectively. When the growth temperature was decreased, however, an increased NH3 plasma time was required to obtain a saturated growth rate of 0.038 nm/cycle. Also, NH3 plasma power higher than 40 W was required to obtain a saturated growth rate of 0.038 nm/cycle even at a growth temperature of 270°C. However, (002) preferred orientation of Ru film was only observed at higher plasma power than 100W. Moreover, the saturation condition obtained on the flat SiO2/Si substrate resulted in poor step coverage of Ru on the trench pattern with an aspect ratio of 8:1, and longer NH3 plasma time improved the step coverage.
Abstract
Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using Ru(EtCp)2 and NH3 plasma. To optimize Ru PEALD process, the effect of growth temperature, NH3 plasma power and NH3 plasma time on the growth rate and preferred orientation of the deposited film was systemically investigated. At a growth temperature of 270°C and NH3 plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat SiO2/Si substrate when the Ru(EtCp)2 and NH3 plasma time was 7 and 10 sec, respectively. When the growth temperature was decreased, however, an increased NH3 plasma time was required to obtain a saturated growth rate of 0.038 nm/cycle. Also, NH3 plasma power higher than 40 W was required to obtain a saturated growth rate of 0.038 nm/cycle even at a growth temperature of 270°C. However, (002) preferred orientation of Ru film was only observed at higher plasma power than 100W. Moreover, the saturation condition obtained on the flat SiO2/Si substrate resulted in poor step coverage of Ru on the trench pattern with an aspect ratio of 8:1, and longer NH3 plasma time improved the step coverage.
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