단일 원소 금속의 영역 선택적 원자층 증착법 연구 동향
Recent Studies on Area Selective Atomic Layer Deposition of Elemental Metals
0
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
The semiconductor industry faces physical limitations due to its top-down manufacturing processes. High cost of EUV equipment, time loss during tens or hundreds of photolithography steps, overlay, etch process errors, and contamination issues owing to photolithography still exist and may become more serious with the miniaturization of semiconductor devices. Therefore, a bottom-up approach is required to overcome these issues. The key technology that enables bottom-up semiconductor manufacturing is area-selective atomic layer deposition (ASALD). Here, various ASALD processes for elemental metals, such as Co, Cu, Ir, Ni, Pt, and Ru, are reviewed. Surface treatments using chemical species, such as self-assembled monolayers and small-molecule inhibitors, to control the hydrophilicity of the surface have been introduced. Finally, we discuss the future applications of metal ASALD processes.
Abstract
The semiconductor industry faces physical limitations due to its top-down manufacturing processes. High cost of EUV equipment, time loss during tens or hundreds of photolithography steps, overlay, etch process errors, and contamination issues owing to photolithography still exist and may become more serious with the miniaturization of semiconductor devices. Therefore, a bottom-up approach is required to overcome these issues. The key technology that enables bottom-up semiconductor manufacturing is area-selective atomic layer deposition (ASALD). Here, various ASALD processes for elemental metals, such as Co, Cu, Ir, Ni, Pt, and Ru, are reviewed. Surface treatments using chemical species, such as self-assembled monolayers and small-molecule inhibitors, to control the hydrophilicity of the surface have been introduced. Finally, we discuss the future applications of metal ASALD processes.
참고문헌 (73)
- J. Zhang, , Nanomanuf. Metrol, 5, pp.191~ (2022)
- R. W. Johnson, , Mater. Today, 17, pp.236~ (2014)
- G. N. Parsons, , J. Vac. Sci. Technol., A, 37, pp.020911~ (2019)
- S. D. Elliott, , J. Chem. Phys, 146, pp.052822~ (2017)
- D. J. Hagen, , Appl. Phys. Rev, 6, pp.041309~ (2019)
- R. M. M. Hasan, , Nanomanuf. Metrol, 1, pp.67~ (2018)
- R. F. Pease, , Proc. IEEE, 96, pp.248~ (2008)
- A. J. M. Mackus, , Nanoscale, 6, pp.10941~ (2014)
- G. N. Parsons, , Chem. Mater, 32, pp.4920~ (2020)
- A. J. M. Mackus, , Chem. Mater, 31, pp.2~ (2019)
- R. Chen, , Adv. Mater, 18, pp.1086~ (2006)
- C. de Paula, , J. Mater. Res, 36, pp.582~ (2021)
- M. Pasquali, , Appl. Surf. Sci, 540, pp.148307~ (2021)
- H. Nadhom, , J. Phys. Chem. Lett, 12, pp.4130~ (2021)
- S. Belahcen, , J. Vac. Sci. Technol., A, 39, pp.012410~ (2021)
- J. Kwon, , Chem. Mater, 24, pp.1025~ (2012)
- M. F. J. Vos, , Chem. Mater, 31, pp.3878~ (2019)
- M. F. J. Vos, , J. Vac. Sci. Technol. A, 39, pp.032412~ (2021)
- J. Qi, , J. Chem. Phys, 147, pp.154702~ (2017)
- H. M. Kim, , Chem. Mater, 33, pp.4353~ (2021)
- M. M. Kerrigan, , Chem. Mater, 29, pp.7458~ (2017)
- M. Breeden, , ACS Appl. Nano Mater, 4, pp.8447~ (2021)
- T. D. M. Elko-Hansen, , ECS Trans, 80, pp.29~ (2017)
- X. Jiang, , J. Vac. Sci. Technol. A, 32, pp.041513~ (2014)
- B. G. Willis, , ECS Trans, 64, pp.253~ (2014)
- M. Kim, , ACS Omega, 4, pp.11126~ (2019)
- M. M. Kerrigan, , ACS Appl. Mater. Interfaces, 10, pp.14200~ (2018)
- P. S. Yang, , Ultramicroscopy, 211, pp.112952~ (2020)
- A. J. M. MacKus, , J. Phys. Chem. C, 117, pp.10788~ (2013)
- A. J. M. MacKus, , Nanoscale, 4, pp.4477~ (2012)
- J. An, , Phys. Chem. Chem. Phys, 15, pp.7520~ (2013)
- I. Zyulkov, , ACS Appl. Mater. Interfaces, 9, pp.31031~ (2017)
- M. M. Minjauw, , Chem. Mater, 31, pp.1491~ (2019)
- A. Brady-Boyd, , Appl. Surf. Sci, 586, pp.152679~ (2022)
- H. Y. Nie, , Appl. Sci, 12, pp.4932~ (2022)
- A. Badia, , Acc. Chem. Res, 33, pp.475~ (2000)
- R. Wojtecki, , ACS Appl. Mater. Interfaces, 13, pp.9081~ (2021)
- R. Bogue, , Assembly Automation, 28, pp.211~ (2008)
- A. Ulman, , Chem. Rev, 96, pp.1533~ (1996)
- H. Junsic, , Langmuir, 23, pp.1160~ (2007)
- X. Jiang, , J. Phys. Chem. C, 113, pp.17613~ (2009)
- R. K. Smith, , Prog. Surf. Sci, 75, pp.1~ (2004)
- I. Zyulkov, , ACS Appl. Mater. Interfaces, 12, pp.4678~ (2020)
- J. Lee, , Adv. Mater. Interfaces, 9, pp.2102364~ (2022)
- H. B. R. Lee, , J. Electrochem. Soc, 157, pp.D10~ (2010)
- H. B. R. Lee, , ECS Trans, 16, pp.219~ (2008)
- O. Seitz, , J. Am. Chem. Soc, 131, pp.18159~ (2009)
- W. H. Kim, , J. Electrochem. Soc, 158, pp.D1~ (2011)
- B. H. Lee, , Angew. Chem, 121, pp.4606~ (2009)
- E. Färm, , Thin Solid Films, 517, pp.972~ (2008)
- B. Saha, , J. Micromech. Microeng, 26, pp.013002~ (2015)
- X. Jiang, , J. Electrochem. Soc, 154, pp.D648~ (2007)
- E. Färm, , Chem. Vap. Deposition, 12, pp.415~ (2006)
- D. Ryan, , Langmuir, 20, pp.9080~ (2004)
- C. Prasittichai, , ACS Appl. Mater. Interfaces, 6, pp.17831~ (2014)
- D. L. Allara, , Biosens. Bioelectron, 10, pp.771~ (1995)
- R. Khan, , Chem. Mater, 30, pp.7603~ (2018)
- J. Soethoudt, , J. Phys. Chem. C, 124, pp.7163~ (2020)
- P. Deminskyi, , J. Vac. Sci. Technol. A, 39, pp.022402~ (2021)
- M. J. M. Merkx, , Chem. Mater, 32, pp.7788~ (2020)
- R. H. J. Vervuurt, , Nanotechnology, 27, pp.405302~ (2016)
- X. Jiang, , ECS Trans, 3, pp.249~ (2007)
- K. J. Park, , Appl. Phys. Lett, 86, pp.051903~ (2005)
- R. W. Mann, , J. Electrochem. Soc, 141, pp.1347~ (1994)
- H. Jeon, , Thin Solid Films, 299, pp.178~ (1997)
- S. Choi, , IEEE International Reliability Physics Symposium Proceedings, pp.1~ (2018)
- M. Hosseini, , 2022 IEEE International Interconnect, pp.27~ (2022)
- J. Cai, , ACS Appl. Nano Mater, 1, pp.522~ (2018)
- L. Zhang, , J. Mater. Chem. A, 6, pp.24397~ (2018)
- K. Cao, , Sci. Rep, 5, pp.1~ (2014)
- M. J. Jung, , Ceram. Int, 48, pp.36773~ (2022)
- 최석, "분말 코팅을 위한 원자층 증착법", 한국분말재료학회지, 26(3), pp.243~250 (2019), 한국분말재료학회[DOI]
- D. H. Kim, , Ceram. Int, 44, pp.19554~ (2018)