전자선 리소그래피 공정 최적화를 통한 100 nm 이하 초미세 패턴을 포함하는 포토 마스크 제작
Fabrication of a Photomask Containing Ultra-Fine Patterns of less than 100 nm through the Process Optimization of Electron Beam Lithography
1
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
This study aims to develop an electronic beam lithography processing technique with the best pattern resolution among top-down machining methods and apply it to manufacture nanoscale structures. When electron beams enter a substrate with highly dense patterns, a pattern distortion occurs due to the electron beam proximity effect caused by the scattering of electron beams reaching the pattern region under the substrate. A silicon nanomold of line width 50 nm was produced and the pattern uniformity was satisfied within the tolerance range through a proper correction of the electron beam proximity effect. In addition, a photo mask with ultra-fine patterns of diameter less than 100 nm was manufactured for use in the semiconductor exposure process using the correction method of the electron beam proximity effect and innovative methods involving liftoff processes.
Abstract
This study aims to develop an electronic beam lithography processing technique with the best pattern resolution among top-down machining methods and apply it to manufacture nanoscale structures. When electron beams enter a substrate with highly dense patterns, a pattern distortion occurs due to the electron beam proximity effect caused by the scattering of electron beams reaching the pattern region under the substrate. A silicon nanomold of line width 50 nm was produced and the pattern uniformity was satisfied within the tolerance range through a proper correction of the electron beam proximity effect. In addition, a photo mask with ultra-fine patterns of diameter less than 100 nm was manufactured for use in the semiconductor exposure process using the correction method of the electron beam proximity effect and innovative methods involving liftoff processes.
참고문헌 (8)
- H. J. Levinson, "Principles of Lithography" (2005), SPIE Press
- J. G. Kim, "전자빔 응용 나노가공기술", KSPE, 25(3) (2008)
- Y. Chen, "Nano fabrication by electron beam lithography and its applications", J. MEE, 35, pp.57~72 (2015)
- S. K. Oh, "Proximity Effect Correction in Electron Beam Lithography", KSMTE, pp.87~91 (2009)
- G. Owen, "Method for proximity effect correction in electron lithography", J. Vac. sci. & tech. B, 8(6) (1990)
- E. H. Anderson, "Influence of sub-100 nm scattering on high-electron beam lithography", J. Vac sci, & tech, 19(6), pp.2504~2507 (2001)
- S. Y. Lee, "Spatial dose control for fabrication of saw tooth Structures", J. Vac. sci. & tech. B, 27(6), pp.2580~2584 (2009)
- H. Yang, "Electron beam lithography of HSQ", PMMA bilayer resists for negative tone lift-off process, 2008, pp.85, 814~817