ReRAM 소자의 비정질물질 Ag도핑에 따른 특성 향상에 대한 연구
Improving Uniformity of ReRAM Devices by Ag-Nanocrystal Doping
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The most popular devices in next-generation computer memory technology are the phase change RAM (PRAM), nano-floating gate memory (NFGM), resistance RAM (ReRAM), polymer RAM (PoRAM), magnetic RAM (MRAM), and molecular electronic devices. Amongst these, ReRAM is the most-researched candidate for nonvolatile memory technologies due to its simple metal-insulator-metal (MIM) structure and excellent operational characteristics. However, it faces obstacles such as high production costs and insufficient uniformity. This study aims to tackle the latter problem by spin-coating Ag nanoparticles on the upper electrode to improve the uniformity characteristics.
Abstract
The most popular devices in next-generation computer memory technology are the phase change RAM (PRAM), nano-floating gate memory (NFGM), resistance RAM (ReRAM), polymer RAM (PoRAM), magnetic RAM (MRAM), and molecular electronic devices. Amongst these, ReRAM is the most-researched candidate for nonvolatile memory technologies due to its simple metal-insulator-metal (MIM) structure and excellent operational characteristics. However, it faces obstacles such as high production costs and insufficient uniformity. This study aims to tackle the latter problem by spin-coating Ag nanoparticles on the upper electrode to improve the uniformity characteristics.
참고문헌 (5)
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