Cu pillar 범프 내의 금속간화합물 성장거동에 미치는 시효처리의 영향
Effect of Thermal Aging on the Intermetallic compoundGrowth kinetics in the Cu pillar bump
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초록
시효처리에 따른 Cu pillar 범프 내 다양한 계면에서의 금속간화합물 성장거동을 각각 120, 150, 165℃의 온도에서 300시간동안 시효처리하면서 연구하였다. 분석 결과 Cu pillar와 SnPb 계면에서 는 Cu6Sn5와 Cu3Sn이 관찰되었고, 시효처리 시간이 경과함에 따라 parabolic 형태로 성장하였다. 또한 시 효처리 온도가 높을수록 시간에 따른 Cu6Sn5와 Cu3Sn의 성장속도는 더욱 빨랐다. Kirkendall void는 Cu pillar와 Cu3Sn사이의 계면과 Cu3Sn 내부에서 형성되었고, 시효처리 시간이 경과함에 따라 성장하였다. 리플로우 후에 SnPb와 Ni(P)사이의 계면에서는 (Cu,Ni)6Sn5가 형성되었고, 시효처리 시간에 따른 (Cu,Ni)6Sn5의 두께 변화는 관찰되지 않았다. 시효처리 온도와 시간에 따른 금속간화합물의 두께 변화를 이용하여 전체(Cu6Sn5 + Cu3Sn)금속간화합물과 Cu6Sn5, Cu3Sn 금속간화합물의 성장에 대한 활성화 에너 지를 구해본 결과 각각 1.53, 1.84, 0.81 eV의 값을 가지고 있었다.
Abstract
: Growth kinetics of intermetallic compound (IMC) at various interface in Cu pillar bump during aging have been studied by thermal aging at 120, 150 and 165C for 300h. In result, Cu6Sn5 and Cu3Sn were observed in the Cu pillar/SnPb interface and IMC growth followed parabolic law with increasing aging temperatures and time. Also, growth kinetics of IMC layer was faster for higher aging temperature with time. Kirkendall void formed at interface between Cu pillar and Cu3Sn as well as within the Cu3Sn layer and propagated with increasing time. (Cu,Ni)6Sn5 formed at interface between SnPb and Ni(P) after reflow and thickness change of (Cu,Ni)6Sn5 didn't observe with aging time. The apparent activation energies for growth of total (Cu6Sn5 + Cu3Sn), Cu6Sn5 and Cu3Sn intermetallics from measurement of the IMC thickness with thermal aging temperature and time were 1.53, 1.84 and 0.81 eV, respectively.
참고문헌 (17)
- "International technology Roadmap for semiconductors 1999 Edition" (2000), industry Association
- "Electromigration behavior in the 63Sn-37Pb solder strip", 11(2), pp.53~ (2004)
- "International technology Roadmap for semiconductors 2004 Update" (2005), industry Association
- "Advanced copper column based solder bump for flip chip interconnection", 21(1), pp.15~ (1998)
- "Predicting optimal process conditions for flip-chip assembly using copper column bumped dies", pp.338~343 (2002)
- "Cu", SnAg double bump flip chip assembly as an alternative of solder flip chip on organic substrates for fine pitch applications, 2007, 864~871
- "Effect of thermal aging on board level drop reliability for Pb-free BGA Packages", pp.1256~1262 (2004)
- "Kirkendall void formation in eutectic Sn-Pb solder joint on bare Cu and its effect on joint reliability", 97, pp.024508~ (2005)
- "Effect of intermetallic and kirkendall voids growth on board level drop reliability for SnAgCu lead-free BGA solder joint", pp.275~282 (2006)
- "Impact reliabilities of lead-free solder joints with Ni(P), Cu and Ni metallizations" (2006)
- "Interfacial reactions between lead-free solders and common base materials", R 49, pp.1~60 (2005)
- "Microstructure evolution of eutectic Sn-Ag solder joints", 23, pp.765~772 (1994)
- "Cross-interaction of under-bump metallurgy and surface finish in flip-chip solder joints", 33(12), pp.1424~1428 (2004)
- "Study of electromigration-induced Cu consumption in the flip-chip Sn", Cu solder joints, 2006, pp.100, 083702~
- "Effect of isothermal aging on intermetallic compound layer growth at the interface between Sn-3.5Ag-0.75Cu solder and Cu substrate", 39, pp.4211~4217 (2004)
- "Cu-Sn Intermetallic compound growth in hot-air-leveled tin at and below 100C AMP Journal of Technology", 3, pp.46~54 (1993)
- "Solid state diffusion in Cu-Sn and Ni-Sn diffusion couples with flip-chip scale dimensions", 15, pp.396~403 (2007)