Ar+ RF 플라즈마 처리조건이 임베디드 PCB내 전극 Cu박막과 ALD Al2O3박막 사이의 계면파괴에너지에 미치는 영향
Effect of Ar+ RF Plasma Treatment Conditions on Interfacial Adhesion Energy Between Cu and ALD Al2O3 Thin Films for Embedded PCB Applications
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임베디드 PCB 기판내 유전체 재료인 Atomic Layer Deposition(ALD) Al2O3박막과 전극재료인 스퍼터 증착된 Cu박막 사이의 계면접착력을 90o peel test방법으로 측정하여 순수 빔 굽힘을 가정한 에너지 평형 해석을 통하여 계면파괴에너지를 구하였다. Cu/Al2O3의 계면파괴에너지(Γ)는 매우 약하여 측정할 수 없었으나, 접착력 향상층 Cr박막을 삽입하여 Cr/Al2O3의 계면파괴에너지는 10.8±5.5 g/㎜를 얻었다. Al2O3 표면에 0.123 W/㎠ 의 power density로 2분간 Ar+ RF 플라즈마 전처리를 하고 Cr박막을 삽입한 Cr/Al2O3 계면파괴에너지는 39.8±3.2 g/㎜으로 매우 크게 증가하였는데, 이는 Ar+ RF 플라즈마 전처리에 따른 mechanical interlocking 효과와 Cr-O 화학결합 효과가 동시에 기여한 것으로 생각된다.
Abstract
: Interfacial fracture energy() between Al2O3 thin film deposited by Atomic Layer Deposition(ALD) and sputter deposited Cu electrode for embedded PCB applications is measured from a 90o peel test. While the interfacial fracture energy of Cu/Al2O3 is very poor, Cr adhesion layer increases the interfacial fracture energy to 39.83.2 g/mm for Ar+ RF plasma power density of 0.123 W/cm, which seems to come from the enhancement of the mechanical interlocking and Cr-O chemical bonding effects.
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