수소 플라즈마 처리를 이용한 구리-구리 저온 본딩
H2 Plasma Pre-treatment for Low Temperature Cu-Cu Bonding
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초록
상압 수소 플라즈마 전처리가 구리-구리 직접 본딩에 미치는 영향에 대해서 조사하였다. 상압 수소 플라즈마처리를 통해 구리 박막의 표면 산화층을 환원시킬 수 있었음을 GIXRD 분석을 통해 확인하였다. 플라즈마 파워가 크고플라즈마 처리 시간이 길수록 환원력 및 표면 거칠기 관점에서 효과적이었다. DCB를 이용한 계면 결합 에너지 측정에서상압 수소 플라즈마 전처리 후 300oC에서 본딩한 경우 양호한 계면 결합 에너지를 나타내었으나, 본딩 온도가 낮아질수록 계면 결합 에너지가 낮아져 200oC에서는 본딩이 이루어지지 않았다. 습식 전처리의 경우 250oC 이상에서 본딩한 경우 강한 결합력을 보였으며, 200oC에서는 낮은 계면 결합 에너지를 나타내었다.
Abstract
We investigated the effects of atmospheric hydrogen plasma treatment on Cu-Cu direct bonding. Hydrogen plasma was effective in reducing the surface oxide layer of Cu thin film, which was confirmed by GIXRD analysis. It was observed that larger plasma input power and longer treatment time were effective in terms of reduction and surface roughness. The interfacial adhesion energy was measured by DCB test and it was observed to decrease as the bonding temperature decreased, resulting in bonding failure at bonding temperature of 200oC. In case of wet treatment, strong Cu- Cu bonding was observed above bonding temperature of 250oC.
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