전기도금법을 이용하여 형성한 Au-Sn 플립칩 접속부의 미세구조 및 접속저항
Microstructure and Contact Resistance of the Au-Sn Flip-Chip Joints Processed by Electrodeposition
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초록
Au와 Sn을 순차적으로 도금한 Au/Sn 범프를 플립칩 본딩하여 Au-Sn 솔더 접속부를 형성 후, 미세구조와 접속저항을 분석하였다. 285oC에서 30초간 플립칩 본딩한 Au-Sn 솔더 접속부는 Au5Sn+AuSn lamellar 구조로 이루어져 있으며, 이 시편을 310oC에서 3분간 유지하여 2차 리플로우시 Au5Sn+AuSn interlamellar spacing이 증가하였다. 285oC에서 30초간 플립칩 본딩한 Au-Sn 접속부는 15.6 mΩ/bump의 평균 접속저항을 나타내었으며, 이 시편을 다시 310oC에서 3분간 유지하여 2차 리플로우 한 Au-Sn 접속부는 15.0 mΩ/bump의 평균 접속저항을 나타내었다.
Abstract
Microstructure and contact resistance of the Au-Sn solder joints were characterized after flipchip bonding of the Au/Sn bumps processed by successive electrodeposition of Au and Sn. Microstructure of the Au-Sn solder joints, formed by flip-chip bonding at 285oC for 30 sec, was composed of the Au5Sn+AuSn lamellar structure. The interlamellar spacing of the Au5Sn+AuSn structure increased by reflowing at 310oC for 3 min after flip-chip bonding. While the Au-Sn solder joints formed by flip-chip bonding at 285oC for 30 sec exhibited an average contact resistance of 15.6 mΩ/bump, the Au-Sn solder joints reflowed at 310oC for 3 min after flip-chip bonding possessed an average contact resistance of 15.0 mΩ/bump,
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