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Analytical Quantification and Effect of Microstructure Development in Thick Film Resistor Processing

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초록

Microstructure developments of RuO2 based thick film resistors during firing as a function of glass viscosity were analytically quantified and its effect on the electrical property was investigated. The microstructure development was retarded as the viscosity of glass was increased. It was found that the viscosity range for each stage of microstructure development are as follows ; 7500-105 Pa·s for the glass sintering, 2000-7500 Pa·s for the glass island formation, 700-2000 Pa·s for the glass spreading, and 50-700 Pa·s for the infiltration. The sheet resistivity decreased as the viscosity of glass in the resistor film increased due to the higher chance of sintering for the conductive particles with the higher viscosity of the glass.

Abstract

Microstructure developments of RuO2 based thick film resistors during firing as a function of glass viscosity were analytically quantified and its effect on the electrical property was investigated. The microstructure development was retarded as the viscosity of glass was increased. It was found that the viscosity range for each stage of microstructure development are as follows ; 7500-105 Pa·s for the glass sintering, 2000-7500 Pa·s for the glass island formation, 700-2000 Pa·s for the glass spreading, and 50-700 Pa·s for the infiltration. The sheet resistivity decreased as the viscosity of glass in the resistor film increased due to the higher chance of sintering for the conductive particles with the higher viscosity of the glass.

참고문헌 (11)

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  2. A. N. Prabhu, "Investigation of Microstructure Development in RuO2-Lead Borosilicate Glass Thick Films", Materials Science Research, 10, pp.399~ (1975)
  3. G. E. Pike, "Electrical Properties and Conduction Mechanisms on Ru based Thick Film (Cermet) Resistors", Journal of Applied Physics, 48(12), pp.5152~ (1977)
  4. P. Palanisamy, "Influences of Substrate on Microstructure Development in Thick Film Resistors", 박사, pp.1979
  5. D. H. R. Sarma, "Microstructure Development Process in Ruthenium Dioxide Glass Thick Film Resistors", 박사, pp.1982
  6. S. M. Chitale, "Critical Relationships between Particle Size, Composition, and Microstructure in Thick-Film Resistors", IEEE Transactions on Components, Hybrids and Manufacturing Technology, 11(4), pp.604~ (1988)
  7. P. Palanisamy, "Liquid-Phase Sintering in Thick Film Resistor Processing", Journal of the American Ceramic Society, 68(8), pp.215~ (1985)
  8. A. Kusy, "On the Structure and Conduction Mechanism of Thick Resistive Films", Thin Solid Films, 37, pp.281~ (1976)
  9. A. Kusy, "Chains of Conducting Particles that Determine the Resistivity of Thick Resistive Films", Thin Solid Films, 43, pp.243~ (1977)
  10. T. Shartis, "Viscosity and Density of Molten Optical Glasses", Journal of Research of NBS, 46(3), pp.176~ (1951)
  11. G. S. Fulcher, "Analysis of Recent Measurements of the Viscosity of Glasses", Journal of the American Ceramic Society, 8(6), pp.339~ (1925)

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