저온 Cu/Ag-Ag/Cu 본딩에서의 Ag 나노막 효과
Effect of Ag Nanolayer in Low Temperature Cu/Ag-Ag/Cu Bonding
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초록
차세대 반도체 기술은 이종소자 집적화(heterogeneous integration)를 이용한 시스템-인-패키징(system-inpackage, SIP) 기술로 발전하고 있고, 저온 Cu 본딩은 SIP 구조의 성능 향상과 미세 피치 배선을 위해서 매우 중요한 기술이라 하겠다. 본 연구에서는 porous한 Ag 나노막을 이용하여 Cu 표면의 산화 방지 효과와 저온 Cu 본딩의 가능성을조사하였다. 100oC에서 200oC의 저온 영역에서 Ag가 Cu로 확산되는 것보다 Cu가 Ag로 확산되는 것이 빠르게 관찰되었고, 이는 저온에서 Ag를 이용한 Cu간의 고상 확산 본딩이 가능함을 나타내었다. 따라서 Ag 나노막을 이용한 Cu 본딩을 200oC에서 진행하였고, 본딩 계면의 전단 강도는 23.27 MPa로 측정되었다.
Abstract
System-in-package (SIP) technology using heterogeneous integration is becoming the key of next-generation semiconductor packaging technology, and the development of low temperature Cu bonding is very important for highperformance and fine-pitch SIP interconnects. In this study the low temperature Cu bonding and the anti-oxidation effect of copper using porous Ag nanolayer were investigated. It has been found that Cu diffuses into Ag faster than Ag diffuses into Cu at the temperatures from 100oC to 200oC, indicating that solid state diffusion bonding of copper is possible at low temperatures. Cu bonding using Ag nanolayer was carried out at 200oC, and the shear strength after bonding was measured to be 23.27 MPa.
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