유연성 유기물 transistor를 제작을 위한 고유전 박막 위에서의 Pentacene의 특성
Characteristics of pentacene on high-k film for flexible organic field effect transistor
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본 연구는 OTS 표면 처리 유무에 따른 HfO2 위에서의 pentacene의 grain growth를 비교 연구하였다. OTS 처리에 의해 HfO2 의 표면은 hydrophilic에서 hydrophobic으로 변화되었으며, pentacene의 grain size는 50 nm 에서 90 nm으로 증가되었다. 이러한 pentacene의 크기 증가와 더불어 pentacene은 3-dimensional island 구조를 가지며, bulk phase 없이 thin film phase만의 출현으로 인해 OTS/HfO2 박막 위에서 pentacene은 보다 방향성을 가지며 정렬되었다.
Abstract
We reported the grain growth of pentacene on HfO2 film depending on OTS treatment. The hydrophilic HfO2 thin film was changed into hydrophobic with less interface energy by OTS treatment. The grain size of pentacene on OTS/HfO2 film was increased from 50 nm to 90 nm with the variation of surface energy and the structure was maintained 3-dimensional island structure. Pentacene on OTS/HfO2 surface was directionally arrayed due to appearance of the only thin film phase without bulk phase by OTS treatment.
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