블록 공중합체 박막을 이용한 실리콘 나노점의 형성
Fabrication of Si Nano Dots by Using Diblock Copolymer Thin Film
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Abstract
Dense and periodic arrays of holes and Si nano dots were fabricated on silicon substrate. The nanopatterned holes were approximately 15~40 nm wide, 40 nm deep and 40~80 nm apart. To obtain nano-size patterns, self-assembling diblock copolymer were used to produce layer of hexagonaly ordered parallel cylinders of polymethylmethacrylate (PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS. 100 -thick Au thin film was deposited by using e-beam evaporator. PS template was removed by lift-off process. Arrays of Au nano dots were transferred by using Fluorine-based reactive ion etching(RIE). Au nano dots were removed by sulfuric acid. Si nano dots size and height were 30~70 nm and 10~20 nm respectively.
참고문헌 (8)
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