4-point bending test system을 이용한 Cu-Cu 열 압착 접합 특성 평가
Characterization and observation of Cu-Cu Thermo-Compression Bonding using 4-point bending test system
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초록
3차원 칩 적층 접합에 사용하기 위한 Cu-Cu 금속 저온 접합 공정을 위하여 접합 온도 및 플라즈마 표면 전처리에 따른 열 압착 접합을 수행 하였다. 4점굽힘시험과 CCD 카메라를 이용하여 Cu 접합부의 정량적인 계면접착에너지를 평가하였다. 접합 온도 250℃, 300℃, 350℃에서 각각 1.38±1.06(상한값), 7.91±0.27(하한값), 10.36±1.01(하한값) J/m² 으로 접합온도 300℃ 이상에서 계면접착에너지 5 J/m² 이상의 값을 얻었다. 접합 온도 300℃ 이하 낮은 온도에서 접합하기 위해 Cu-Cu 열 압착 접합 전 Ar+H₂ 플라즈마로 200℃에서 2분간 표면 전처리 후 250℃ 조건에서 열 압착 접합할 경우 계면접착에너지 값이 6.59±0.03(하한값) J/m²로 표면 전 처리하지 않은 시험편에 비해 접합 특성이 크게 증가 하였다.
Abstract
The quantitative interfacial adhesion energy of the Cu-Cu direct bonding layers was evaluated in terms of the bonding temperature and Ar+H₂ plasma treatment on Cu surface by using a 4-point bending test. The interfacial adhesion energy and bonding quality depend on increased bonding temperature and post-annealing temperature. With increasing bonding temperature from 250℃ to 350℃, the interfacial adhesion energy increase from 1.38±1.06 J/m² to 10.36±1.01 J/m². The Ar+H₂plasma treatment on Cu surface drastically increase the interfacial adhesion energy form 1.38±1.06 J/m² to 6.59±0.03 J/m². The plasma pre-treatment successfully reduces processing temperature of Cu to Cu direct bonding.
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