전착법을 이용한 Cu2O 박막 형성 및 공정 조건에 따른 특성 변화
Influence of Process Conditions on Properties of Cu2O Thin Films Grown by Electrodeposition
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초록
Cu2O는 초저가 태양전지의 흡수층으로 적용될 수 있는 물질 중 하나로 direct band gap(Eg= ~2.1 eV)을 갖고있으며 최대 650 nm 파장의 빛을 흡수 할 수 있는 높은 흡수율을 가지고 있다. 또한 무독성, 풍부한 매장량으로 낮은 비용 등의 여러 장점을 가지며 간단하고 저렴한 방법으로 대량으로 제작이 가능하다. 본 연구에서 Au가 증착된 SiO2/Si 기판 위에 전착법을 통해 Cu2O 박막을 제작하였다. 우리는 용액의 pH와 작업전극에 인가되는 전위, 용액의 온도와 같은 공정조건을 바꾸어주었고 최종적으로 XRD와 SEM 사진 분석을 통해 박막의 특성을 확인하였다.
Abstract
Cuprous oxide (Cu2O) is one of the potential candidates as an absorber layer in ultra-low-cost solar cells. Cu2O is highly desirable semiconducting oxide material for use in solar energy conversion due to its direct band gap (Eg = ~2.1 eV) and high absorption coefficient that absorbs visible light of wavelength up to 650 nm. In addition, Cu2O has other several advantages such as non-toxicity, low cost and also can be prepared with simple and cheap methods on large scale. In this work, we deposited the Cu2O thin films by electrodeposition on gold coated SiO2/Si wafers. We changed the process conditions such as pH of the solution, applied potential on working electrode, and solution temperature. Finally, we confirmed the structural properties of the thin films by XRD and SEM.
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