갈륨과 Cu/Au 금속층과의 계면반응 연구
Study on the Interfacial Reactions between Gallium and Cu/Au Multi-layer Metallization
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초록
본 연구에서는 최근 저온접합 소재로 각광받고 있는 Ga과 대표적인 전극 물질인 Cu와의 반응연구를 실시하여 저온 솔더링 적용시 필요한 정보들을 확인하고자 하였다. 80-200oC 온도범위에서 Ga과 Cu/Au 기판을 반응시켜 계면반응 및 금속간화합물(IMC) 성장을 관찰하고 분석하였다. 반응계면에서 성장하는 주요한 IMC는 CuGa2 상이었으며 그상부에는 작은 입자크기를 가지는 AuGa2 IMC 그리고 하부에는 얇은 띠 형상의 Cu9Ga4 IMC가 형성되었다. CuGa2 입자들은 scallop 형상을 보이며 Cu6Sn5 성장의 경우와 비슷하게 반응시간이 증가함에 따라서 큰 형상변화없이 입자 크기가 증가하였다. CuGa2 성장기구를 분석한 결과 120-200oC 온도범위에서 시간지수는 약 3.0으로 산출되었고, 활성화에너지는 17.7 kJ/mol로 측정되었다.
Abstract
In this study, a reaction study between Ga, which has recently been spotlighted as a low-temperature bonding material, and Cu, a representative electrode material, was conducted to investigate information necessary for lowtemperature soldering applications. Interfacial reaction and intermetallic compound (IMC) growth were observed and analyzed by reacting Ga and Cu/Au substrates in the temperature range of 80-200oC. The main IMC growing at the reaction interface was CuGa2 phase, and AuGa2 IMC with small particle sizes was formed on the upper part and Cu9Ga4 IMC with a thin band shape on the lower part of the CuGa2 layer. CuGa2 particles showed a scallop shape, and the particle size increased without significant shape change as the reaction time increased, similar to the case of Cu6Sn5 growth. As a result of analyzing the CuGa2 growth mechanism, the time exponent was calculated to be ~3.0 in the temperature range of 120-200oC, and the activation energy was measured to be 17.7 kJ/mol.
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