모듈레이티드 펄스 스퍼터링으로 상온 증착한 Indium-Tin-Oxide
Indium Tin Oxide (ITO) Nano Thin Films Deposited by a Modulated Pulse Sputtering at Room Temperature
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High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak powerdensity in a short period, you can get high, so high ionization sputtering rate can make. Higher ionizationof sputtered species to a variety of coating materials conventional in the field of improving the characteristicsand self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the samepower , but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacementfor HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered speciescan increase the deposition rate is lowered and at the same time to overcome the problems to be reported . Thedifferences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas , MPP is3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulseis applied can be micro advantages. In this experiment, In2O3 : SnO2 composition ratio of 9 : 1 wt% targetwas used , Ar : O2 flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of O2 and then fixed 2 ~ 6 sccm was compared against that . The thicknessof the thin film deposition is fixed at 60 nm , when the partial pressure of oxygen at 9.1%, the specificresistance value of 4.565 × 10−4 Ωcm, transmittance 86.6%, mobility 32.29 cm2 / Vs to obtain the value
Abstract
High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak powerdensity in a short period, you can get high, so high ionization sputtering rate can make. Higher ionizationof sputtered species to a variety of coating materials conventional in the field of improving the characteristicsand self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the samepower , but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacementfor HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered speciescan increase the deposition rate is lowered and at the same time to overcome the problems to be reported . Thedifferences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas , MPP is3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulseis applied can be micro advantages. In this experiment, In2O3 : SnO2 composition ratio of 9 : 1 wt% targetwas used , Ar : O2 flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of O2 and then fixed 2 ~ 6 sccm was compared against that . The thicknessof the thin film deposition is fixed at 60 nm , when the partial pressure of oxygen at 9.1%, the specificresistance value of 4.565 × 10−4 Ωcm, transmittance 86.6%, mobility 32.29 cm2 / Vs to obtain the value
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