본문 바로가기
KERD
논문KCI 등재

원자층증착법으로 증착된 강유전성 플루오라이트 구조 강유전체 박막의 불순물 효과

A brief review on the effect of impurities on the atomic layer deposited fluorite-structure ferroelectrics

양건|박주용|박민혁|이동현
한국표면공학회 (The Korean Society of Surface Science and Engineering)|2020.08|한국표면공학회지 (Journal of Surface Science and Engineering)|제53권 제4호|pp. 169-181|DOI 10.5695/JKISE.2020.53.4.169

0

조회

0

다운로드

0

인용

0

참고문헌

키워드

FerroelectricZrO2PolymorphismImpurityHfO2
주제분류기계공학

초록

The ferroelectricity in emerging fluorite-structure oxides such as HfO2 and ZrO2 has attracted increasing interest since 2011. Different from conventional ferroelectrics, the fluorite-structure ferroelectrics could be reliably scaled down below 10 nm thickness with established atomic layer deposition technique. However, defects such as carbon, hydrogen, and nitrogen atoms in fluorite-structure ferroelectrics are reported to strongly affect the nanoscale polymorphism and resulting ferroelectricity. The characteristic nanoscale polymorphism and resulting ferroelectricity in fluorite-structure oxides have been reported to be influenced by defect concentration. Moreover, the conduction of charge carriers through fluorite-structure ferroelectrics is affected by impurities. In this review, the origin and effects of various kinds of defects are reviewed based on existing literature.

Abstract

The ferroelectricity in emerging fluorite-structure oxides such as HfO2 and ZrO2 has attracted increasing interest since 2011. Different from conventional ferroelectrics, the fluorite-structure ferroelectrics could be reliably scaled down below 10 nm thickness with established atomic layer deposition technique. However, defects such as carbon, hydrogen, and nitrogen atoms in fluorite-structure ferroelectrics are reported to strongly affect the nanoscale polymorphism and resulting ferroelectricity. The characteristic nanoscale polymorphism and resulting ferroelectricity in fluorite-structure oxides have been reported to be influenced by defect concentration. Moreover, the conduction of charge carriers through fluorite-structure ferroelectrics is affected by impurities. In this review, the origin and effects of various kinds of defects are reviewed based on existing literature.

참고문헌 (48)

  1. T. S. Böscke, "Ferroelectricity in hafnium oxide thin films", Appl. Phys. Lett, 99, pp.102903~ (2011)
  2. M. H. Park, "Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films", Adv. Mater, 27, pp.1811~1831 (2015)
  3. M. H. Park, "Thin Hfx Zr1‐x O2 Films:A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability", Adv. Energy Mater, 4, pp.1400610~ (2014)
  4. M. H. Park, "Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1-xO2 films", Nano Energy, 12, pp.131~140 (2015)
  5. M. H. Park, "Effect of acceptor doping on phase transitions of HfO2 thin films for energy-related applications", Nano Energy, 36, pp.381~389 (2017)
  6. K. D. Kim, "Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors", Nano Energy, 39, pp.390~399 (2017)
  7. M. H. Park, "Fluorite-structure antiferroelectrics", Rep. Prog. Phys, 82, pp.124502~ (2019)
  8. M. Hoffmann, "Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors", Nano Energy, 18, pp.154~164 (2015)
  9. M. H. Park, "Review and perspective on ferroelectric HfO2-based thin films for memory applications", MRS Commun, 8, pp.795~808 (2018)
  10. Mikolajick, "Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors", MRS Bull, 43, pp.340~346 (2018)
  11. C. S. Hwang, "Prospective of semiconductor memory devices: from memory system to materials", Adv. Electron. Mater, 1, pp.1400056~ (2015)
  12. Shimizu, "Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposi ted ferroelectric Hf0.5Zr0.5O2 thin film on Ir electrode", Jpn. J. Appl. Phys, 53, pp.09PA04~ (2014)
  13. L. Xu, "Kinetic pathway of the ferroelectric phase formation in doped HfO2films", Journal of Applied Physics, 122, pp.124104~ (2017)
  14. S. Starschich, "An extensive study of the influence of dopants on the ferroelectric properties of HfO2", Journal of Materials Chemistry C, 5, pp.333~338 (2017)
  15. Y. Wei, "A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films", Nat. Mater., 17, pp.1095~1100 (2018)
  16. Materlik, R., "The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model", J. Appl. Phys, 117, pp.134109~ (2015)
  17. R. Batra, "Dopants Promoting Ferroelectricity in Hafnia: Insights from a comprehensive Chemical Space Exploration", Chem. Mater, 29(21), pp.9102~9109 (2017)
  18. M. H. Park, "Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides", Adv. Electron. Mater, 5(3), pp.1800522~ (2019)
  19. Y. H. Lee, "Nucleation-Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2Thin Films", Adv. Electron. Mater, 5(2), pp.1800436~ (2019)
  20. M. H. Park, "Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X-Ray Diffraction", Adv. Electron. Mater, 4(7), pp.1800091~ (2018)
  21. M. H. Park, "Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory", Nanoscale, 11(41), pp.19477~19487 (2019)
  22. M. H. Park, "Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films", Nanoscale, 10(2), pp.716~725 (2018)
  23. M. H. Park, "Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment", Nanoscale, 9(28), pp.9973~9986 (2017)
  24. E. Cho, , Appl. Phys. Lett, 92, pp.233118~ (2008)
  25. Künneth, C, "Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO2 from First-Principles:Implications for Ferroelectric Memory and Energy-Related Applications", ACS Appl. Nano Mater, 1, pp.254~264 (2018)
  26. Zhao, X., "First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide", Phys. Rev. B -Condens. Matter Mater. Phys., 65, pp.1~4 (2002)
  27. H. S. Jung, "The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2 Films on Ge Substrate", ECS J. Solid State Sci. Technol, 1, pp.N33~N37 (2012)
  28. K. D. Kim, "Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors", Nano Energy, 39, pp.390~399 (2017)
  29. D. Nečas, "Gwyddion: An opensource software for SPM data analysis", Cent. Eur. J. Phys, 10, pp.181~188 (2012)
  30. D. Y. Cho, "Stabilization of tetragonal HfO2 under low active oxygen source environment in atomic layer deposition", Chem. Mater, 24, pp.3534~3543 (2012)
  31. U. Schroeder, "Recent progress for obtaining the ferroelectric phase in hafnium oxide-based films: Impact of oxygen and zirconium", Jpn. J. Appl. Phys, 58 (2019)
  32. K. D. Kim, "Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition", J. Mater. Chem. C, 4, pp.6864~6872 (2016)
  33. Aggarwal, S., "Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors", Appl. Phys. lett., 73, pp.1973~1975 (1998)
  34. Shimamoto, Y., "H2 damage of ferroelectric Pb (Zr, Ti) O3 thin-film capacitors—The role of catalytic and adsorptive activity of the top electrode", Appl. Phys. Lett., 70, pp.3096~3097 (1997)
  35. Kushida‐Abdelghafar, Keiko, "Electrodeinduced degradation of Pb(ZrxTi1−x)O3 (PZT)polarization hysteresis characteristics in Pt", PZT, Appl. Phys. Lett, pp.1996, 69[DOI]
  36. M. H Park, "Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes", Appl. Phys. Lett., 105, pp.072902~ (2014)
  37. J. G. Kang, "H-related defect complexes in HfO2: A model for positive fixed charge defects", Appl. Phys. Lett., 84, pp.3894~3896 (2004)
  38. S. Y. Oh, "Improved Endurance of HfO2-based metal-ferroelectric-insulator-silicon structure by high-pressure hydrogen annealing", IEEE Electron Device Letters, 40, pp.1092~1095 (2019)
  39. S. J. Kim, "Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN", Hf0.5Zr0.5O2, Appl. Phys. Lett, pp.2019, 115[DOI]
  40. M. H. Park, "Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films", J. Mater. Chem. C, 3, pp.6291~6300 (2015)
  41. R. Batra, "Dopants Promoting Ferroelectricity in Hafnia : Insights from a comprehensive Chemical Space Exploration", Chem. Mater, 29, pp.9102~9109 (2017)
  42. L. Xu, "Ferroelectric phase stabilization of HfO2 by nitrogen doping", Appl. Phys. Express, 9, pp.091501~ (2016)
  43. L. Xu, "Kinetic pathway of the ferroelectric phase formation in doped HfO2films", J. Appl. Phys, 122, pp.124104~ (2017)
  44. W. Hamouda, "Physical chemistry of the TiN", Hf0. 5Zr0. 5O2 interface, 2020, pp.127, 064105~
  45. Y. Zhou, "The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle", Comput. Mater, 167, pp.143~150 (2019)
  46. X. Liu, "ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone", ECS J. Solid State Sci. Technol, 152, pp.G213~ (2005)
  47. X. Liu, "Fluid Imprint and Inertial Switching in Ferroelectric La : HfO2Capacitors", ACS Appl. Mater. Interfaces, 38, pp.35115~35121 (2019)
  48. J. L. Gavartin, "The role of nitrogen-related defects in high-k dielectric oxides : Densityfunctional studies", J. Appl. Phys, 97, pp.053704~ (2005)

이 간행물의 다른 논문 (7건)

백색광 소자 응용을 위한 Gd2WO6:RE3+ (RE = Dy, Sm, Dy/Sm) 형광체의 구조 및 발광 특성정재용, 박기원, 조신호pp. 131-137전기화학적 금속 3D 프린터의 적층 조건 연구를 통한 마이크로 코일 제작김성빈, 김영국, 유봉영, 강동화pp. 138-143Improvement of joining strength between aluminum alloy and polymer by two - step anodizationKure-Chu Song-Zhu, Yashiro Hitoshi, 이성형pp. 144-152급속 파괴 양극산화로 제조된 TiO<sub>2</sub> 나노 튜브 분말을 활용한 폴리에틸렌 복합 필름의 UV 광촉매 분해임경민, 김용태, 최진섭pp. 153-159열전도성 점착제 응용을 위한 고분자 기반 탄소나노소재 복합체 제조 및 특성 평가이애리, 정구환, 윤은혜, 허성규, 조성일, 이우영, 황재성, Lee Byeong-Joopp. 160-168
원문 보기