나노전자소자 응용을 위한 고배향 단일벽 탄소나노튜브의 합성과 고수율 전사

Abstract

Single-walled carbon nanotubes (SWNTs) have attracted significant interest due to their extraordinary electronic, thermal, and mechanical properties, making them promising materials for next generation electronic and energy storage devices. We here report a synthesis of parallel-aligned (PA) SWNTs on quartz substrates and direct transfer process onto silicon dioxide wafers without loss of as-grown SWNTs during the wet transfer. The growth temperature to obtain PA-SWNTs in chemical vapor deposition (CVD) was changed and investigated the effect of CVD temperature on tube density and diameter distribution. The morphological and structural properties of as-grown and transferred SWNTs were characterized using scanning electron microscopy and Raman spectroscopy. We believe that the proposed approach offers great potential for SWNTs-based nanoelectronic device fabrication.