음영효과를 고려한 a-Si PV모듈의 출력 변화 및 최적 설계조건에 관한 연구
Analysis of Power Variation and Design Optimization of a-Si PV Modules Considering Shading Effect
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a-Si solar cell has relatively dominant drift current when compared with crystalline solar cell due to the high internal electric field. Such drift current make an impact on the PV module in the local shading. In this paper, the a-Si PV module output characteristics of shading effects was approached in terms of process condition, because of the different deposition layer of thin film lead to rising the resistance. We suggested design condition to ensure the long-term durability of the module with regard to the degradation factors such as hot spot by analyzing the module specification. The result shows a remarkable difference on module uniformity for each shading position. In addition, the unbalanced power loss due to power mismatch of each module could intensify the degradation.
Abstract
a-Si solar cell has relatively dominant drift current when compared with crystalline solar cell due to the high internal electric field. Such drift current make an impact on the PV module in the local shading. In this paper, the a-Si PV module output characteristics of shading effects was approached in terms of process condition, because of the different deposition layer of thin film lead to rising the resistance. We suggested design condition to ensure the long-term durability of the module with regard to the degradation factors such as hot spot by analyzing the module specification. The result shows a remarkable difference on module uniformity for each shading position. In addition, the unbalanced power loss due to power mismatch of each module could intensify the degradation.
참고문헌 (4)
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- Donald, "A.Neamen,Semiconductor Physics and Devices", pp.303~ (2003), McGraw Hill
- W. Herrmann, "Hot-spot investigations on PV modules-new concepts for a test standard and consequences for module design with respectto bypass diodes", 26th IEEE PVSC, ~ (1997)
- S. L. Miller, "Ionisation rates for holes and electrons in silicon", Phys. Rev, 105, pp.1246~ (1957)